Design Considerations for High Efficiency GaAs HBT MMIC Power Amplifiers

Ali, F.

doi:10.1109/euma.1994.337206

24th European Microwave Conference, 1994 1994

DOI: 10.1109/euma.1994.337206

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Design Considerations for High Efficiency GaAs HBT MMIC Power Amplifiers

F. Ali

Abstract: This paper provides a synopsis of the design considerations for high efficiency, MMIC power amplifiers based on GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues related to power HBT unit-cell and two stage power amplifiers are addressed.

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1995

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Cited by 2 publications

References 28 publications

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GaAs power HBTs with 84% power-added efficiency operating in C-X band

Ali

Aitchison

Hewitt

1995

25th European Microwave Conference, 1995

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This paper describes the results of an experimental study of operating GaAs Power Heterojunction Bipolar Transistors (HBTs) in Class C bias mode over C-X frequency Bands. We find that the power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 12% percentage points (from 72% in Class AB to 84.5% in Class C) with concurrent loss of 4.3 dB in power gain. At 9 GHz, the PAE increased by only 8.1% in Class C mode compared to ClassAB bias condition with an associated 4.5 dB reduction in power gain. The efficiency improves monotonically with lower operating frequency. In a single tone environment, the second harmonic of the RF signal increases by -7 dB in Class C over Class AB.

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GaAs power HBTs with 84% power-added efficiency operating in C-X band

Ali

Aitchison

Hewitt

1995

25th European Microwave Conference, 1995

Self Cite

View full text Add to dashboard Cite

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Physical heterojunction bipolar transistor model for microwave large signal simulation

Schaper

Ahlers

1995

25th European Microwave Conference, 1995

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A new physical large signal HBT model is proposed in this contribution. To our knowledge it is the first time that a physical large signal HBT model is implemented into a circuit simulator. The new HBT model descrbes the transistor action of the intrinsic HBT by an analytic formulation based on physical prnciples. The core of this model comprises emitter, base and oollector layers, the corresponding model parameters are given by material and design data. It is shown that a one dimensional description of the core including an equation for the power balance of the transistor is sufficient to descrbe the self-heating effect in the dc range as well as the junction temperature under large signal conditions. The extrinsic regions of the HBT are modelled by an equivalent circuit with passive elements. The values for these parasitic elements are given by material data and by an extraction method based on measured characterstics.

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Design Considerations for High Efficiency GaAs HBT MMIC Power Amplifiers

Abstract: This paper provides a synopsis of the design considerations for high efficiency, MMIC power amplifiers based on GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues related to power HBT unit-cell and two stage power amplifiers are addressed.

Cited by 2 publications

References 28 publications

GaAs power HBTs with 84% power-added efficiency operating in C-X band

GaAs power HBTs with 84% power-added efficiency operating in C-X band

Physical heterojunction bipolar transistor model for microwave large signal simulation

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