2018 IEEE Symposium on VLSI Technology 2018
DOI: 10.1109/vlsit.2018.8510676
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A 4M Synapses integrated Analog ReRAM based 66.5 TOPS/W Neural-Network Processor with Cell Current Controlled Writing and Flexible Network Architecture

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Cited by 157 publications
(77 citation statements)
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“…In recent years, many ReRAM-based CIM chips have been proposed, with attempts made to balance between accuracy and efficiency while achieving higher precision. A trend to increase the number of I/O and precision of weights has been observed for operations ranging from 1b-input, ternaryweight, 3b-output [3] and 1b-input, 8b-weight, 1b-output [4] to 2b-input, 3b-weight, 4b-output [5] (see Fig. 1).…”
Section: Reram-based Cimmentioning
confidence: 89%
See 1 more Smart Citation
“…In recent years, many ReRAM-based CIM chips have been proposed, with attempts made to balance between accuracy and efficiency while achieving higher precision. A trend to increase the number of I/O and precision of weights has been observed for operations ranging from 1b-input, ternaryweight, 3b-output [3] and 1b-input, 8b-weight, 1b-output [4] to 2b-input, 3b-weight, 4b-output [5] (see Fig. 1).…”
Section: Reram-based Cimmentioning
confidence: 89%
“…The other method involves making a multilevel cell (MLC) ReRAM to represent the weight value with more than one bit. In [4], a ReRAM with eight levels that achieve 256 times higher precision of weight is proposed. However, due to the process variation in ReRAM, precisely controlling the resistance of ReRAM with 256 levels is difficult.…”
Section: B Weight Limitationsmentioning
confidence: 99%
“…Through using a cross-point array with only a single RRAM [53,54] or one-transistor and one-resistor (1T-1R) configuration, [55][56][57][58][59] diverse classification and recognition features and functions have been explored and demonstrated experimentally. A two-layer perceptron has been constructed by the building of 128 Â 64 Ta/HfO x /Pt (from top to bottom) based 1T-1R arrays.…”
Section: Rrammentioning
confidence: 99%
“…Similar hardware performance was also verified through mass-produced Ta 2 O 5 /TaO x -based 1T-1R synapses. [59] The uniform analog states linearly tuned from 20 to 50 μA with a verification technique that allowed a maximum recognition accuracy of 90% on the MNIST database. The 180 nm Ta 2 O 5 /TaO x -based RRAM exhibited a similar number of synapses per unit area when compared with a 65 nm SRAM.…”
Section: Rrammentioning
confidence: 99%
“…Many ideas of PIMs have been proposed by using SRAM cells [18]- [20] or non-volatile memory (NVM) cells. Especially, NVM based PIMs with such as flash [21], [22], ReRAM [23], [24] or PCM [25], are expected to achieve extremely higher power efficiency thanks to massively parallel execution with multiple weights per cell and no data transfer from outside of the macro to load weigh information. Peripheral circuit design of PIM macros can be quite different from that of normal macros for conventional data storage.…”
Section: Processing-in-memory For E-aimentioning
confidence: 99%