A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching

Rashtian, Hooman; Mirabbasi, Shahriar; Taris, Thierry; Deval, Yann; Bégueret, Jean-Baptiste

doi:10.1007/s10470-012-9889-5

Cited by 11 publications

(10 citation statements)

References 11 publications

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“…Also note that unlike the work in Ref. [2] the gain variation of the proposed circuit in this work would affect the input and output impedance of the variable-gain amplifier (VGA), and thus the gain variation technique has some effects on the value of S 11 and S 22 . In this work, to save the silicon area, a two-stage configuration is used as a proof-of-concept to show the possibility of changing the gain of a VGA with body biasing.…”

Section: Measurement Resultsmentioning

confidence: 96%

“…If more stages were to be used, one could tune to few more frequencies staggered within the band too. For the gain variation technique, body‐biasing approach is utilized. Other gain variation techniques at mm‐wave band reported in the literature suggest the use of attenuators or switching of the gain .…”

Section: Amplifier Designmentioning

confidence: 99%

“…In Section IV, the symmetric layout approach is applied to a body‐biased two‐stage variable‐gain amplifier which is based on the design in Ref. . In Section V, measurement results of a fabricated prototype in 65‐nm CMOS are presented.…”

Section: Introductionmentioning

confidence: 99%

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Design and layout techniques for a mm-wave body-biased variable-gain amplifier

Rashtian

Mirabbasi

2013

Int J RF and Microwave Comp Aid Eng

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A two‐stage mm‐wave variable‐gain amplifier is designed and implemented in a 65‐nm CMOS technology. A fully symmetric layout has been utilized to suppress the odd‐mode of propagation and increase the quality factor in co‐planar waveguide transmission lines. Moreover, a new design technique is proposed for implementing decoupling capacitors for mm‐wave frequencies. Body‐biasing technique is utilized to change the amplifier gain without significant change in the overall power consumption of the circuit. The measurement results show that the amplifier achieves a peak gain of 10 dB with a gain variation range of 25 dB while consuming 12 mW from a 1.2‐V supply. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:470–477, 2014.

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Section: Measurement Resultsmentioning

confidence: 96%

Section: Amplifier Designmentioning

confidence: 99%

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Design and layout techniques for a mm-wave body-biased variable-gain amplifier

Rashtian

Mirabbasi

2013

Int J RF and Microwave Comp Aid Eng

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“…The current bleeding technique is also employed to increase the gain of the LNA. Especially, variable gain LNA gets benefits from current bleeding technique …”

Section: Techniques Used For Gain Improvementmentioning

confidence: 99%

“…As the final stage has to be capable of handling large signal coming from previous stages; overall IIP3 of the LNA is dominated by the last stage of the LNA . The linearity is increased by positive feedback, which has uninterrupted the power consumption.…”

Section: Linearity Improvement Techniquesmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

Veerasamy

Bhaskar

2022

Circuit Theory & Apps

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In the ever-growing 5G technology, the millimetre-wave (mmWave) frequency spectrum is the inevitable mainstream for high-speed wireless communication.The wide-ranging spectrum bandwidth of the mmWave frequency attracts interest in radio frequency (RF) front-end design which will be very much beneficial for security and cellular-based applications such as intersatellite communication and automotive vehicle-to-vehicle communication. The RF front end requires low-power and low-noise receiver architecture for effective satellite communication, and it needs high throughput with maximum data transfer for cellular-based applications. To address these challenges, this paper presents a novel low-noise amplifier (LNA) operating from 57.12-to 66.25-GHz frequency. The design is implemented using UMC 65-nm CMOS process technology, and the post-layout simulations are carried out using the Cadence Spectre RF tool. At 60 GHz, the LNA exhibits a power gain of 15.46 dB, minimum noise figure (NF) of 1.32 dB while consuming 6.59 mW from a 1.2-V supply. The LNA employs the current reuse feedforward distortion cancelation technique to improve the third-order input intercept point (IIP3) to +7.258 dBm. The proposed LNA provides a relatively better figure of merit compared to some of the recently proposed mmWave LNA architectures.

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A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching

Cited by 11 publications

References 11 publications

Design and layout techniques for a mm-wave body-biased variable-gain amplifier

Design and layout techniques for a mm-wave body-biased variable-gain amplifier

Survey on parameter optimization of mobile communication band low noise amplifier design

A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

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