A 3D analytical modeling of tri-gate tunneling field-effect transistors

Abstract

In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the trigate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson's equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with the 3D device simulation results without the need of fitting parameters. Additionally, the dependence of the tunneling current on the device parameters in terms of the gate oxide thickness, gate dielectric constant, channel length, and applied drain bias is investigated and also demonstrated its agreement with the device simulations.

Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

“…Furthermore, the Shockley-Read-Hall and Auger recombinations; concentration dependent mobility, bandgap narrowing effect, field dependent mobility and trap-assisted tunneling (TAT) models were used to model the recombination and generation in the highly doped regions. Also, we recently presented the validation of our simulation non-local BTBT model by tuning of the effective electron and hole masses as done in our earlier works 13,15,23,35,40 .…”

“…One of the promising new developments in the semiconductor transistors research is tunneling field-effect transistor (TFET) due to the its low subthreshold swing and low off-state leakage current 8,15 . Its current is based on the tunneling effect at the source to channel edge.…”

Three‐dimensional Octameric Assembly of Icosahedral M13 Units in [Au8Ag57(Dppp)4(C6H11S)32Cl2]Cl and its [Au8Ag55(Dppp)4(C6H11S)34][BPh4]2 Derivative

“…For example, enhanced battery performance can be achieved by shifting from 2D electrode materials to 3D structures . Furthermore, 3D tri‐gate transistors have greatly increased the battery life of mobile devices . Although nanomaterials with superior performance could be achieved by 3D assembly, controlling 3D assembly at the atomic level remains challenging.…”

Three‐dimensional analytical modeling and performance analysis of triple material trigate silicon‐on‐insulator MOSFET

“…where C ox , C box , C si represent the effective front gate oxide capacitance, buried oxide capacitance, and Si channel capacitance. The potential distribution along the channel length, thickness, and width in TMTG SOI MOSFET can be calculated by solving three-dimensional Poisson's equation 18,19 given by…”