2012 IEEE/MTT-S International Microwave Symposium Digest 2012
DOI: 10.1109/mwsym.2012.6259461
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A 34% PAE, 26-dBm output power envelope-tracking CMOS power amplifier for 10-MHz BW LTE applications

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Cited by 29 publications
(19 citation statements)
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“…A power calculation of LNA at 10MHz bandwidth with QPSK modulation is -30dBm as presented for 0.18µm CMOS technology for LTE application [8]. CMOS power amplifier achieves an efficiency of 34% for LTE signal [9]. Total power P total is expressed as P total = P signal + P P A + P ckt + P comp (6)…”
Section: Power Consumption Modelmentioning
confidence: 99%
“…A power calculation of LNA at 10MHz bandwidth with QPSK modulation is -30dBm as presented for 0.18µm CMOS technology for LTE application [8]. CMOS power amplifier achieves an efficiency of 34% for LTE signal [9]. Total power P total is expressed as P total = P signal + P P A + P ckt + P comp (6)…”
Section: Power Consumption Modelmentioning
confidence: 99%
“…Low drop-out regulators and switching regulators are not good choice for the bias modulator due to low efficiency and narrow bandwidth, respectively [3,4]. The hybrid bias modulators, which have a highly efficient switching stage and a broadband linear stage, have been popular for the ET applications [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The switching stage supplies most of the current which are around very low frequency including DC.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the bias modulators, which are generally designed using CMOS process, have been generally applied to those PAs using GaAs HBT or SiGe BiCMOS processes for higher performance [13][14][15][16][17][18][19][20]. However, the PAs based on CMOS process has great advantages in lower cost and higher integration in spite of its relatively poor performances [23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Conventional EER structures are nonlinear due to delay mismatch between the amplitude and the phase path, and further, they run into a leakage problem due to a large input power injection even for a low output operation [8]. The ET technique is less sensitive to the delay mismatch [9], and enables a linear operation by utilizing a linear PA and supply modulator without additional linearization technique [10] to improve the efficiency of the PA.…”
Section: ⅰ Introductionmentioning
confidence: 99%
“…HARMONIC CONTROL FOR LINEAR CMOS PA Fig. 1 shows the schematic design of the CMOS PA with the hybrid supply modulator [10]. The basic structure of the PA is a differential-cascode structure that uses a transformer at the output [10 13].…”
Section: ⅰ Introductionmentioning
confidence: 99%