A 32 GHz 20 dBm-P&lt;inf&gt;SAT&lt;/inf&gt; transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS

Indirayanti, Paramartha; Reynaert, Patrick

doi:10.1109/rfic.2017.7969013

Cited by 25 publications

(13 citation statements)

References 7 publications

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“…With the extensive deployment of mm-wave frequencies envisioned in 5G, new PA design approaches have been developed, e.g., [61], [62], and more research activities are expected in mm-wave DPAs. There are only a few reports of DPAs at mm-wave frequencies to date [63]- [69].…”

Section: B Mm-wave Bandsmentioning

confidence: 99%

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Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

2020

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Section: B Mm-wave Bandsmentioning

confidence: 99%

“…A 40-nm CMOS DPA designed using this technique achieves 3-dB bandwidth of 60-81 GHz (30%). The output power of 20.1 dBm and peak PAE of 11.4% are maintained over [58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77] GHz. The 6-dB back-off PAE is 7% at 72 GHz.…”

Section: B Mm-wave Bandsmentioning

confidence: 99%

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

2020

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“…The published papers related to mm-wave PA research reveal an overall tendency of architectures which are used in frequency ranges above 25 GHz. Papers (Indirayanti & Reynaert, 2017;Li & Wang, 2018;Hamed et al, 2018) present detailed mm-wave CMOS PA reviews distinguishing architecture types alongside their research results. According to the review tables in the latter papers, advanced PA architectures, such as DPA, ET/EER PA, TWA or outphasing PA, are rarely implemented at frequencies above 25 GHz in CMOS process node.…”

Section: Millimeter Wave Radio Frequency Power Amplifiermentioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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Vilnius 2019 Disertacija rengta 2015-2019 metais Vilniaus Gedimino technikos universitete. Vadovas doc. dr. Vaidotas BARZDĖNAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Vilniaus Gedimino technikos universiteto Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. habil. dr. Romualdas NAVICKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Nariai: dr. Alvydas LISAUSKAS (Lenkijos mokslų akademijos Aukšto slėgio fizikos institutas, fizika-N 002), doc. dr. Vitalij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Šarūnas PAULIKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Algimantas VALINEVIČIUS (Kauno technologijos universitetas, elektros ir elektronikos inžinerija-T 001). Disertacija bus ginama viešame Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo tarybos posėdyje 2019 m. birželio 13 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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“…The published papers related to mm-wave PA research reveal an overall tendency of architectures which are used in frequency ranges above 25 GHz. Papers [63][64][65] present detailed mm-wave CMOS PA reviews distinguishing architecture types alongside their research results. According to the review tables in the latter papers, advanced PA architectures, such as DPA, ET/EER PA, TWA or outphasing PA, are rarely implemented at frequencies above 25 GHz in CMOS process node.…”

Section: Millimeter Wave Rf Pamentioning

confidence: 99%

“…class-E, class-F). Papers [64,66,67] propose mm-wave DPAs although deep nanometer CMOS processes (ex. 45 nm, 28 nm) are utilized.…”

Section: Millimeter Wave Rf Pamentioning

confidence: 99%

A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks

Vasjanov

Barzdėnas

2018

Electronics

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The structure of the modern wireless network evolves rapidly and maturing 4G networks pave the way to next generation 5G communication. A tendency of shifting from traditional high-power tower-mounted base stations towards heterogeneous elements can be spotted, which is mainly caused by the increase of annual wireless users and devices connected to the network. The radio frequency (RF) power amplifier (PA) performance directly affects the efficiency of any transmitter, therefore, the emerging 5G cellular network requires new PA architectures with improved efficiency without sacrificing linearity. A review of the most promising reported RF PA architectures is presented in this article, emphasizing advantages, disadvantages and concluding with a quantitative comparison. The main scope of reviewed papers are PAs implemented in scalable complementary metal–oxide–semiconductor (CMOS) and SiGe BiCMOS processes with output powers suitable for portable wireless devices under 32 dBm (1.5 W) in the low- and high- 5G network frequency ranges.

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A 32 GHz 20 dBm-P<inf>SAT</inf> transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS

Cited by 25 publications

References 7 publications

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G

Mid-band 5G wireless network power amplifier research

A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks

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