A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

Tousi, Yahya; Momeni, Omeed; Afshari, Ehsan

doi:10.1109/isscc.2012.6177000

Cited by 49 publications

(24 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the VCO's comparison table, the proposed VCO demonstrates the widest tuning range with similar to [17] and [34] (42 dB better than [18]). Note that for the oscillators reported in [34], the frequency tuning is achieved by TABLE II VCO COMPARISON TABLE III SYNTHESIZER COMPARISON changing the supply voltage, and thus suffer from considerable output power variation.…”

Section: Measurement Resultsmentioning

confidence: 99%

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

Chiang

Wang

Momeni

et al. 2014

IEEE J. Solid-State Circuits

Self Cite

View full text Add to dashboard Cite

Abstract-A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of -77.8 dBc/Hz (-82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32-303.36 GHz (7.9%).

show abstract

Section: Measurement Resultsmentioning

confidence: 99%

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

Chiang

Wang

Momeni

et al. 2014

IEEE J. Solid-State Circuits

Self Cite

View full text Add to dashboard Cite

show abstract

“…When outputs from multiple oscillators are to be combined in parallel, the output signals must be in phase. One way to accomplish the mutual synchronization is to use injection locking [18]. Power combining can also be done spatially by appropriately disposing multiple terahertz sources and antennas, thereby avoiding power loss in power-combining passive components [19].…”

Section: High-frequency Generationmentioning

confidence: 99%

Recent progress and prospects of terahertz CMOS

Fujishima

Amakawa

2015

IEICE Electron. Express

View full text Add to dashboard Cite

Recent progress and prospects of terahertz CMOS integrated circuits is reviewed. The development of terahertz CMOS is somewhat different from the conventional digital and RF CMOS evolution, in that it is not fueled as much by technology scaling. Rather, the key enablers are progress in high-frequency device characterization and modeling techniques and also in design techniques near transistor's active operation limit, f max .

show abstract

“…Also, achieved power levels are not adequate for high-frequency applications. Moreover, mm-wave oscillators are difficult to tune [8]- [10] because parasitics become the major part of tank capacitance at high frequencies. To achieve tunable and high-frequency signal generation, frequency multipliers are usually employed.…”

Section: Introductionmentioning

confidence: 99%

Efficient Microwave and Millimeter-Wave Frequency Multipliers Using Nonlinear Transmission Lines in CMOS Technology

Adnan

Afshari

2015

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

Frequency multipliers are an attractive solution for signal generation in CMOS near and above cutoff frequencies of active devices. This work focuses on nonlinear transmission line (NLTL) based frequency multipliers, which can be employed for high output power and broadband operation. The performance of an NLTL-based multiplier is limited by the phase mismatch at frequencies of interest caused by dispersion. We propose an alternate NLTL and engineer dispersion to eliminate phase mismatch between desired harmonics. We build two prototypes. First, a 20-GHz frequency doubler is implemented in a 65-nm CMOS process. Second, to show the feasibility of our approach near , a 100-GHz frequency tripler is demonstrated in a 130-nm CMOS process ( GHz). The achieved conversion loss is 3.5 and 12.2 dB for the doubler and tripler, respectively. The frequency tripler generates maximum power of 1.5 dBm. The relative bandwidth of the doubler and tripler is about 23% and 12.3%, respectively. To the best of our knowledge, the frequency tripler outperforms any previously reported work implemented in a 130-nm CMOS at or above 100 GHz in terms of output power and bandwidth.Index Terms-Active loading, CMOS, frequency conversion, frequency doubler, frequency multiplier, frequency tripler, microwave, millimeter wave, nonlinear transmission lines (NLTLs), varactor. 0018-9480

show abstract

A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

Cited by 49 publications

References 7 publications

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

Recent progress and prospects of terahertz CMOS

Efficient Microwave and Millimeter-Wave Frequency Multipliers Using Nonlinear Transmission Lines in CMOS Technology

Contact Info

Product

Resources

About