Recent progress and prospects of terahertz CMOS

Fujishima, Minoru; Amakawa, Shuhei

doi:10.1587/elex.12.20152006

Cited by 10 publications

(4 citation statements)

References 30 publications

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“…1, a wireless data rate of 100 Gb/s is expected around 2020. Given the fact that the pace of CMOS technology advancement is slowing down, the role of design in improving circuit performance is expected to become more and more important [41].…”

Section: Discussionmentioning

confidence: 99%

Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

Fujishima

Amakawa

Takano

et al. 2015

IEICE Trans. Electron.

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SUMMARY There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modeling techniques. Low-power high-speed wireless data transfer at 11 Gb/s and 19 pJ/bit and a 7-pJ/bit ultra-low-power transceiver chipset are presented.

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Section: Discussionmentioning

confidence: 99%

Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

Fujishima

Amakawa

Takano

et al. 2015

IEICE Trans. Electron.

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“…As a result, performance improvement of this mixer is a key technology for realizing wireless transceiver under disadvantageous conditions. It is necessary to realize an ultrahigh-frequency circuit by a technology that does not rely on transistor miniaturization [10].…”

Section: Integrated Circuit Realizing Terahertz Transceiver and Its Cmentioning

confidence: 99%

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Fujishima

2018

Photonics

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In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

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“…Additionally, continuous scaling has driven device speeds of RF CMOS [11] and SiGe HBTs into the multi-100-GHz region at the expense of breakdown voltage. Although the f t and f max of transistors in recent nanoscale CMOS and SiGe technologies are nearly comparable to those of InP-based transistors, the metal backend is usually not as good for making passive components such as transmission lines.…”

Section: Introductionmentioning

confidence: 99%

High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems

Nagatani

Nosaka

2016

IEICE Electron. Express

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Communications traffic over photonic networks is exponentially increasing due to the spread of broadband applications. To cope with the rapid growth, novel 100-Gb/s digital coherent systems have been deployed recently in optical core networks. Further research and development of digital coherent technologies with channel rates of beyond 100 Gb/s is now being conducted. Optical transceivers for such high-speed communications systems need high-performance analog and mixed-signal electronic circuits such as optical modulator drivers, transimpedance amplifiers (TIAs), analog-to-digital converters (ADCs), and digital-to-analog converters (DACs). Compound-semiconductor integrated circuits (ICs) have played key roles in this technical field. This paper reviews recent trends in compound-semiconductor ICs for such advanced digital coherent optical communications systems and presents our latest results based on InP heterojunction bipolar transistor (HBT) technology.

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Recent progress and prospects of terahertz CMOS

Cited by 10 publications

References 30 publications

Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems

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