A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

Zong, Zhiwei; Tang, Xinyan; Khalaf, Khaled; Yan, Dongyang; Mangraviti, Giovanni; Nguyen, Johan; Liu, Yao; Wambacq, Piet

doi:10.1109/tmtt.2021.3064022

Cited by 47 publications

(24 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the viewpoint of not reducing the common load impedance, a series type Doherty PA has been proposed instead of the parallel as introduced here [43]. Also, from the viewpoint of increasing load impedance, a differential configuration is being considered, mainly for millimeter-wave band applications [44]- [46]. Based on these, we examined and prototyped a wideband matching circuit for a differential, series-added Doherty PA for HPUE compatible with n40 and n41, which is a band for NR [47].…”

Section: Doherty Pamentioning

confidence: 99%

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Tanaka

Mukai

Imai

et al. 2022

IEICE Trans. Electron.

View full text Add to dashboard Cite

Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code division multiple access), (3) Power mode switching methods for improving efficiency at low output power, (4) Power combining methods that have become important since LTE (long term evolution), and (5) Backoff efficiency improvement methods represented by ET (envelop tracking) and Doherty PA.

show abstract

Section: Doherty Pamentioning

confidence: 99%

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Tanaka

Mukai

Imai

et al. 2022

IEICE Trans. Electron.

View full text Add to dashboard Cite

show abstract

“…Figure 3 shows the small-signal analysis model of the transistor. The admittance of each port is calculated using Equation (1). Each capacitance can be calculated individually, as shown in Equation (2).…”

Section: Size Determination and Analysis Of The Neutralized Capacitormentioning

confidence: 99%

“…Figure 3 shows the small-signal analysis model of the transistor. The admittance of each port is calculated using Equation (1)…”

Section: Size Determination and Analysis Of The Neutralized Capacitormentioning

confidence: 99%

See 1 more Smart Citation

Optimization Technique for High-Gain CMOS Power Amplifier for 5G Applications

et al. 2021

View full text Add to dashboard Cite

In this study, a differential power amplifier (PA) with a high gain of over 30 dB by configuring a three-stage common source unit amplifier was designed. To ensure the stability of the high-gain differential PA, the analysis to apply the capacitive neutralization method to the differential common source PA was conducted. From the analysis, the required neutralized capacitance was quantitatively calculated from the estimated parasitic components of a power cell used in the PA. To verify the feasibility of the proposed optimization technique, a Ka-band PA was designed with a 65 nm RFCMOS process. The measurement results showed a gain of 30.7 dB. The saturated output power was measured as 16.1 dBm, maximum power-added efficiency (PAE) was 29.7%, and P1dB was 13.1 dBm.

show abstract

“…The mixed-signal PAs need external digital controls [11,12,13], while the out-phasing PAs require additional signal separation and suffer from nonlinearity [14,15,16,17]. As for Doherty PAs, instead of the bulky and lossy 𝜆/4 transmission line (TL) [18,19,20,21,22,23,24], the transformer-based passive networks are selected together with the capacitors to realize both impedance matching and load modulation [25,26,27,28,29,30].…”

Section: Introductionmentioning

confidence: 99%

A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications

Chen

Wang

et al. 2023

IEICE Electron. Express

View full text Add to dashboard Cite

In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensation. This work achieves a saturated output power (P sat ) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm 2 with a static power consumption of 76mW.

show abstract

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

Cited by 47 publications

References 48 publications

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Optimization Technique for High-Gain CMOS Power Amplifier for 5G Applications

A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications

Contact Info

Product

Resources

About