A 26–38 GHz Monolithic Doubly Balanced Mixer

Lin, Che-Hung; Lin, Chih‐Ming; Lai, Yu-Ann; Wang, Yeong-Her

doi:10.1109/lmwc.2008.2002465

Cited by 14 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 summarizes the measured performance of the Gilbert‐cell mixer and includes other reported performance figures, for comparison. The double‐balanced Gilbert‐cell mixer achieved a wide band, high conversion gain and good linearity and isolation, compared to the figures published for other studies [1–4].…”

Section: Resultsmentioning

confidence: 69%

“…At the front end of the MMW transceiver, the mixer plays an important role in the translation of the RF signals to the IF band. Many studies that have used GaAs pHEMT technology have used small passive mixers [4–6] with good linearity and wideband capability. Some GaAs pHEMT active mixers e.g., distributed mixer [7, 8], or traveling‐wave mixer [9] have been reported to have wideband capability, high gain and good linearity, but their disadvantages are their large size and high power dissipation.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology

Kao

Yeh

et al. 2012

Micro & Optical Tech Letters

View full text Add to dashboard Cite

This article presents a wideband, double‐balanced microwave/millimeter‐wave Gilbert‐cell mixer, using 0.15 μm GaAs pHEMT technology. Two baluns and a matching network are used in RF‐ and LO‐ports to convert single‐ended signals to differential signals, for wideband use. This mixer demonstrates an average conversion gain is 2.22 ± 1.5 dB at PLO = 2 dBm, from 30 to 65 GHz. The LO‐to‐RF and LO‐to‐IF isolations are all better than 28 dB, between 30 and 65 GHz. The measured P1dB and IIP3 are 5 dBm at 40 GHz and 10 dBm at 60 GHz, respectively. The mixer occupies a chip area, including probing pads, of 1.68 mm2 and consumes 21 mA, with a supply voltage of 5V. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1196–1200, 2012

show abstract

Section: Resultsmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 99%

A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology

Kao

Yeh

et al. 2012

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…Because of the inherent configuration and low parasitic IF inductance, a DBSM has wide RF/IF bandwidths [17,18,19]. A DBSM with a dual balun was reported in [17].…”

Section: Introductionmentioning

confidence: 99%

Design of a 35–95 GHz fundamental monolithic mixer based on a novel IF extraction structure

Lin

Zhang²,

Jia³

et al. 2019

IEICE Electron. Express

View full text Add to dashboard Cite

The letter presents a high-performance doubly balanced ring mixer (DBRM) fabricated by a 0.1 µm GaAs pHEMT process that achieves ultrawide radio-frequency (RF) and intermediate frequency (IF) bandwidths. A multiple-coupled-line Marchand balun is optimized to extend the RF bandwidth. A novel structure is designed to directly extract the IF current from the RF balun without an additional IF coupler. Due to the proposed IF extraction structure, the IF bandwidth is broadened with decreased complexity. The size of the whole chip including the probe GSG pads is 0.95×0.65 mm 2 . The measured results show that the conversion loss is 7.2-11.9 dB for the RF frequency range of 35-95 GHz with an LO power level of 14 dBm and a fixed IF frequency of 1 GHz. In addition, the conversion loss is better than 12 dB for the IF frequency range from DC to 30 GHz under a fixed LO frequency. key words: ultrawide bandwidth, doubly balanced ring mixer (DBRM), Marchand balun, monolithic microwave integrated circuit (MMIC) Classification: Microwave and millimeter-wave devices, circuits, and modules

show abstract

“…Passive doubly balanced mixers (DBM) are usually the mixer of choice because of their superior suppression of spurious mixing products, good port-to-port isolation, wide dynamic range, and no need for DC biasing power [1]- [5].…”

Section: Introductionmentioning

confidence: 99%

A Q-band doubly balanced mixer in 0.15um GaAs pHEMT technology

Chen

Jiang

Wang

et al. 2014

2014 IEEE International Wireless Symposium (IWS 2014)

View full text Add to dashboard Cite

In this paper, the development of a Q-band doubly balanced mixer in 0.15um GaAs pHEMT process is presented. Five-conductor coupled line Marchand balun is designed and utilized for the LO and RF signal input. Instead of using conventional input port matching method, the complex impedance of the diode ring is directly matched with differential single-stub networks between the balun and diode ring, which realized a compact layout for the matching network, and greatly improved the return loss of the LO port, thus enhanced the mixer operation bandwidth. Measured results coincide well with the simulations: the conversion gain is -9.2dB ~ -11.9dB for RF and LO frequency from 40GHz ~ 50GHz, and IF frequency is DC ~ 10GHz, with the LO power level of +15dBm. The typical LO-RF isolation is 33 dB with minimum value of 19.3dB for LO between 35GHz to 50 GHz, and the IIP3 is above +12.6dBm for 40GHz ~ 50GHz, which is suitable for the China millimeter wave communication standard "Q-LINKPAN".Index Terms -Doubly balanced mixer, matching network, multi-conductor coupled line, Q-band.

show abstract

A 26–38 GHz Monolithic Doubly Balanced Mixer

Cited by 14 publications

References 10 publications

A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology

A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology

Design of a 35–95 GHz fundamental monolithic mixer based on a novel IF extraction structure

A Q-band doubly balanced mixer in 0.15um GaAs pHEMT technology

Contact Info

Product

Resources

About