A 254 GHz CMOS Transmitter With VCO-Q Modulation

Koo, Hyunji; Kim, Choul‐Young; Hong, Songcheol

doi:10.1109/lmwc.2016.2562099

Cited by 8 publications

(5 citation statements)

References 4 publications

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“…The bigger the ΔV tune is, the wider the TR achieves. The importance of ΔV tune is described in FOM TV depicted in 12) [11]. However, FOM TP and FOM TV do not simultaneously account for ΔV tune and P out to be beneficial to VCO comparison.…”

Section: Implementation and Measurement Resultsmentioning

confidence: 99%

“…This is particularly important when simulating bipolar VCOs at millimeter-wave frequencies, the transistor model must capture selfheating and avalanche multiplication, which are two positive feedback phenomena that cause significant nonconvergence problems at large voltage swings. During the transient simulations, the impedance of the Sparameter signal source is set to a small value (i.e., [10][11][12][13][14][15][16][17][18][19][20], to clearly reflect the expected effective resistance of the tank inductance at the oscillation frequency, and thus to allow for the onset of oscillations to occur.…”

Section: B Design For Low Phase N Oisementioning

confidence: 99%

“…However, over the past several years, silicon and silicon germanium (SiGe) have emerged as low cost alternatives that deliver the performance of III-V compound semiconductors. A number of RF VCOs have been reported using SiGe BiCMOS [6]- [8], and CMOS technology [9]- [11]. With rapid developments in silicon technologies, these systems become feasible to be implemented using BiCMOS or CMOS to achieve low cost, low power, and high integration.…”

Section: Introductionmentioning

confidence: 99%

“…However, as the frequency increases, the output power from a push-push oscillator is usually low, as reported in. The output power can be improved through a tuning network at the output, but only for a narrow bandwidth [11]. It can be concluded that both topologies are capable of very good phase noise.…”

Section: Introductionmentioning

confidence: 99%

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A 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology

Qi¹,

He²,

Shen³

2017

JCM

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A low-phase-noise, low-power Ka-band Voltage-Controlled Oscillator (VCO) using cross-coupled pair configuration is presented. The Ka-band VCO circuit uses 0.18 μm SiGe BiCMOS technology. The VCO has low phase noise of-114.6 dBc/Hz at 1 MHz offset from 32.12 GHz carrier frequency and can be tuned from 30.17 to 33.48 GHz. The figure of merit is-202.1 dBc/Hz. The power consumption of the VCO with 0.27 mm 2 chip area is 1.8 mW from a 1.5 V power supply.

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Section: Implementation and Measurement Resultsmentioning

confidence: 99%

Section: B Design For Low Phase N Oisementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology

Qi¹,

He²,

Shen³

2017

JCM

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“…Terahertz science and technology has drawn many research interests in the areas ranging from fully-integrated image sensor [1][2][3][4][5][6][7][8][9][10][11] to wireless communication transceivers. [11][12][13][14][15][16][17][18] For these applications, a signal generator with good performances is a critical building block. However, there are many challenges in designing a signal generator.…”

Section: Introductionmentioning

confidence: 99%

A 217.6–227-GHz CMOS Signal Generator with Injection Locking Technique

Cheng

Qian

Luo

et al. 2019

J CIRCUIT SYST COMP

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This paper proposes a 217.6–227-GHz signal generator with injection locking technique in 65-nm CMOS process. The injection locking technique is exploited to synchronize the phases of the two individual voltage control oscillators (VCOs) and improve the output power. The phase noise of the proposed signal generator is improved. The full-layout electromagnetic (EM) simulation in collaboration with the post-layout simulation is utilized to verify the proposed signal generator. The simulation results show that the frequency tuning range is 9.4[Formula: see text]GHz, and the output power is larger than [Formula: see text]14.25[Formula: see text]dBm. The phase noise at 1[Formula: see text]MHz off the carrier is better than [Formula: see text]92.12[Formula: see text]dBc/Hz. The signal generator occupies a compact silicon area of 0.23[Formula: see text]mm2 including all testing pads.

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