A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology

Compact Modeling and Comparative Analysis of Silicon-Chip Slow-Wave Transmission Lines With Slotted Bottom Metal Ground Planes

“…We demonstrate the usefulness, validity, and excellent accuracy of this approach by full-wave EM simulations and -parameter measurements. A similar approach was previously used as a basis of compact transmission-line modeling method [7]- [9], and a brief summary of the model was presented in [10]. Manuscript and modeling approach.…”

“…Manuscript and modeling approach. The Z elements (L and R) are obtained from a coplanar transmission-line structure, and the Y elements (C and G) are obtained from a grounded coplanar transmission-line structure (after [10]). …”

60 GHz amplifier employing slow-wave transmission lines in 65-nm CMOS

“…In general, substrate shielding with slowwave metal grid is beneficial since it decreases substrate losses and increases the electrical length of the line, therefore matching stubs can become shorter as in [10].…”

“…This means that the use of the SW-CPW line for matching active devices may not be beneficial. The positive effect of the SW-CPW line is smaller attenuation, reduced area as in [10], and more accurate modeling as the substrate is shielded from the propagating wave. The shielding reduces the line attenuation from 3 dB/mm to 1 dB/mm at 60 GHz.…”

One stage 24 GHz LNA with 6.4dB Gain and 2.8 dB NF using 0.18 μm CMOS technology and slow wave transmission lines

“…The amplifier featured 6.4 dB gain and 2.8 dB NF at 24 GHz. This single stage amplifier is the basic building block of a higher gain two stage amplifier which will be described elsewhere [1]. Given a specific topology, the main decision which needs to be made prior to detailed circuit design is the choice of transistor gate width and DC bias.…”