60 GHz amplifier employing slow-wave transmission lines in 65-nm CMOS

Abstract

A three-stage V-band amplifier implemented in 65-nm baseline CMOS technology is presented in this paper. Slow-wave coplanar waveguides are used for matching and interconnects to study the benefits of using this line type in amplifier design. Measured power gain, noise figure and 1 dB output compression point at 60 GHz are 13 dB, 6.3 dB and ?4 dBm, respectively. The amplifier has 19.6 GHz of 3 dB bandwidth, thus covering entirely the unlicensed band around 60 GHz. The performance is achieved with a 1.2 V supply and 45 mA DC current consumption.

BiCMOS Colpitts oscillator for vector-sum interpolators

“…Some of the applications targeted in the mm-wave range are high data rate wireless personal area network communication at 60 GHz (Elkhouly et al , 2012), vehicular radar at 77 GHz (Valdes-Garcia et al , 2010) and high resolution imaging applications at 94 GHz. The SiGe technology with its high f T (Krithivasan et al , 2006) makes high performance mm-wave integrated circuits commercially viable, though there has been a growing interest in developing mm-wave integrated circuits at low cost in CMOS technology (Sandstrom et al , 2010). The IBM 8HP process is a 0.13 μm SiGe BiCMOS process (Mabuza and Sinha, 2013), which offers high performance SiGe HBTs with f t of 200 GHz.…”

Millimeter-wave CMOS power amplifier using slow-wave transmission lines

“…In 2008, S-CPWs were first used in a low-noise amplifier design, demonstrating good performance in noise figure for K-band application [17]. Later on, millimeter-wave PAs using S-CPWs in a 65 nm CMOS technology were reported in [18] for 60-GHz application and even beyond [19].…”