A 24-/60-GHz CMOS On-Chip Dual-Band Bandpass Filter Using Trisection Dual-Behavior Resonators

Yeh, Lung-Kai; Hsu, Cheng-Ying; Chen, Chu-Yu; Chuang, Huey-Ru

doi:10.1109/led.2008.2006696

Cited by 38 publications

(2 citation statements)

References 9 publications

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“…In the conventional dual-band resonator, the transmission zero at lower frequency requires the shunt stub with longer physical length [5]. The wider frequency-spacing of two passbands requires higher characteristic-impedance ratio in the non-uniform shunt stubs [6,7]. This paper uses a uniform left-handed transmission line (LH TL) and right-handed transmission line to miniaturize the dual-band resonator.…”

Section: Introductionmentioning

confidence: 99%

A novel dual bandpass filter incorporating left-handed transmission line based dual-band resonator

Wang

Tzuang³

2015

IEICE Electron. Express

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This paper presents a left-handed transmission line (LH TL) based dual-band resonator to implement the dual-band filter. The proposed resonator consists of one uniform LH TL and one right-handed transmission line (RH TL) to produce three transmission zeros at 52 GHz, 267 GHz, and 531 GHz. The perforated ground plane is applied to extend the operating bandwidth of the LH TL for covering the full bandwidth of the dual-band filter. A CMOS prototype is designed based on the proposed resonator, and measured through the on-wafer measurements. Both simulated and the measured results confirm the insertion-losses of 1.8 dB and 2.4 dB of two passbands at 186 GHz and 420 GHz. The statistic shows the total length of the proposed resonator is about 0.038 λ g at 52 GHz.

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Section: Introductionmentioning

confidence: 99%

A novel dual bandpass filter incorporating left-handed transmission line based dual-band resonator

Wang

Tzuang³

2015

IEICE Electron. Express

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“…Much attention has been paid to the realization of high-quality on-chip bandpass filters. [9][10][11][12][13][14] For example, a lump-element based 77-GHzband band-pass filter is demonstrated in ref. 9, and several micro-stripline (MSL) based 60-GHz-band band-pass filters are reported in refs.…”

Section: Introductionmentioning

confidence: 99%

A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor–Capacitor Structure in 0.18 µm Complementary Metal–Oxide–Semiconductor Technology for Millimeter-Wave Applications

Lin¹,

Huang

Wang

et al. 2012

Jpn. J. Appl. Phys.

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A low-insertion-loss V-band complementary metal–oxide–semiconductor (CMOS) band-pass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (ωz1) and the high-frequency transmission-zero (ωz2) can be tuned individually by adjusting the value of the series capacitor (C s) and the size of the built-in inductor–capacitor (LC) resonator, respectively. The folded short-stub technique is used to reduce the chip size of the filter. To reduce the silicon substrate loss, the CMOS-process-compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, the filter achieves insertion-loss (1/S 21) lower than 3 dB over the frequency range of 46.5–85.5 GHz. The minimum insertion-loss is -1.8 dB at 60 GHz.

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A highly efficient concurrent dual-band GaN class-AB power amplifier at 1.84 GHz and 3.5 GHz

Borjlu

Asemani

Dousti

2017

Int J RF Microw Comput Aided Eng

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This article presents the design, simulation, implementation, and experimental results of a highly efficient, concurrent dual‐band, gallium nitride (GaN), class‐AB power amplifier (PA) at two frequencies: 1.84 and 3.5 GHz. It proposes a novel dual‐band bandpass filter (DBBPF) with quad‐section stepped‐impedance resonators (SIRs) capable of rejecting the annoying frequencies of the second and third harmonics in the dual‐band. The proposed DBBPF was applied in the design of a dual‐band PA using a packaged 10 W GaN transistor. The PA prototype maintained a peak power‐added efficiency (PAE) of 75.3% at the 1.84 GHz frequency and 64.5% at the 3.5 GHz frequency. For a continuous wave output power of 40.9 dBm, the measured gain was 13 dB in the two frequency bands. Linearized modulated measurements, concurrently using 10 MHz quadrature amplitude modulation (16 QAM) signals and worldwide interoperability for microwave access (WiMAX) signals, showed an average PAE of 48.5% and 39.8% and an adjacent channel leakage ratio of −46 and −45 dBc with an average output power of 37.8 and 36.8 dBm at the two frequency bands, respectively. This PA is used for wireless systems. It is especially useful in standard simultaneous global system for mobile (GSM) and WiMAX wireless systems.

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A 24-/60-GHz CMOS On-Chip Dual-Band Bandpass Filter Using Trisection Dual-Behavior Resonators

Cited by 38 publications

References 9 publications

A novel dual bandpass filter incorporating left-handed transmission line based dual-band resonator

A novel dual bandpass filter incorporating left-handed transmission line based dual-band resonator

A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor–Capacitor Structure in 0.18 µm Complementary Metal–Oxide–Semiconductor Technology for Millimeter-Wave Applications

A highly efficient concurrent dual-band GaN class-AB power amplifier at 1.84 GHz and 3.5 GHz

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