A 220 GHz metamorphic HEMT amplifier MMIC

Abstract

In this paper, we present the development of two 220 GHz low-noise amplifier (LNA) MMIC's for use in high-resolution active and passive millimeter-wave imaging systems. The amplifier circuits have been realized using a 0.1mu InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and cascode transistors, thus leading to a compact chip-size and excellent gain performance. The realized single-stage cascode LNA exhibited a small-signal gain of 5 dB at 220 GHz and a maximum gain of 7 dB at 215 GHz with an over-all chip-size of 1 x 1 mm2. The four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz while covering a chip-area of 1 x 2.5 mm2

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

“…RELIABILITY PERFRORMANCE Initial reliability performance was evaluated based on the exit criterion of delta S 21 ≤ -1 dB at 35 GHz with the assumption of the Ea of 1.5 eV based on the lifetesting results at T ambient of 280 °C. The Ea was validated to be greater than 1.5 eV for Pt-sunken gate InP HEMTs [12,33]. Moreover, our recent 3-temperature lifetest demonstrates that the Ea of Ptsunken gate InP HEMT MMICs on 4-inch InP substrates is greater than 1.5 eV [36].…”

“…Although the reliability performance of Pt-sunken InP HEMT was reported based on the transconductance degradation, Δg m , of -10 % on discrete InP MHEMTs [12] and drain current degradation, ΔIdss, of -20 % on InP HEMT MMICs on 3-inch InP substrates [33], the reliability analysis using the ΔS 21 of -1 dB at 35 GHz for Pt-sunken InP HEMT MMICs on 4-inch InP substrates is still lacking. Also, the reliability analysis of r. f. performance represents the real scenario of InP HEMT LNAs during lifetime operation.…”

“…The Pt-sunken gate was initially introduced to fabricate high performance and enhancementmode InP HEMTs [31][32]. Although recent investigation shows that InP HEMTs with Pt-sunken gate have demonstrated superior reliability performance to InP HEMTs with Ti-gate [12,[25][26]33], the reliability evaluation of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates has been lacking. The fabrication of 0.1-μm InP HEMT low noise amplifiers (LNAs) on 4-inch InP substrates is essential for next-generation high performance phased-array applications requiring a high volume of LNA elements [2].…”

“…Superior microwave and millimeter wave performance of InGaAs/InAlAs/InP high electron mobility transistor (HEMT) microwave monolithic integrated circuits (MMICs) has been demonstrated for space and military applications over the frequency ranges 44 GHz [1][2], 94 GHz [3][4][5], 118 GHz [6][7], 155 GHz [8][9], 183-220 GHz [8,[10][11][12], and beyond 250 GHz [13][14][15]. To ensure the reliability of InAlAs/InGaAs/InP HEMT MMICs during their lifetime operation, it is important to demonstrate the high reliability performance of InAlAs/InGaAs/InP HEMT MMICs subjected to elevated temperature lifetest.…”

On-Wafer Vector Network Analyzer Measurements in the 220-325 GHz Frequency Band

“…Advances in these devices benefit electronics for communications, millimeter-wave imaging systems and radiometers for earth remote sensing and astrophysics. Components such as InP HEMT amplifiers with more than 10 dB gain at 225 GHz [9] and 10 dB gain at 235 GHz [1] have been demonstrated. To progress MMIC circuits into the submillimeter-wave range (-300 GHz), characterization of S-parameters above 220 GHz is essential for new transistor device modeling and verification of MMIC designs.…”