A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control

Pfeiffer, Ullrich R.; Goren, D.

doi:10.1109/jssc.2007.899116

Cited by 117 publications

(26 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SiGe-based PA as described in [15] is also included for completeness. With the higher voltage swing available from a SiGe-bipolar transistor, the SiGe-PA outperforms all of the CMOS designs reported to date for almost all performance specifications.…”

Section: Resultsmentioning

confidence: 99%

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Jin

Sanduleanu

Long

2008

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Jin

Sanduleanu

Long

2008

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

“…The wideband amplifiers introduced here are optimized based on exploring the capability of this technology in providing high gain-bandwidth product rather than very high operating frequencies. More research needs to be conducted in order to study the potentials of mask programmable technology for very high frequencies in comparison to the amplifiers already achieved in Si and SiGe technologies [1], [19], [25], [26].…”

Section: Discussionmentioning

confidence: 99%

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Rabieirad

Martinez²,

Mohammadi

2009

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 m) dielectric layer that enables very low loss lines ( 0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time.

show abstract

“…Entailed with all these advantages, issues such as system optimization, testing time and cost reduction are still pending challenges. Focusing on power amplifiers (PA), efficiency and output power control are strategic performances that require both its monitoring and its optimization [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

Altet

Gomez

Perpinyà

et al. 2013

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control

Cited by 117 publications

References 24 publications

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

Contact Info

Product

Resources

About