A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Jin, Yanyu; Sanduleanu, Mihai; Long, John R.

doi:10.1109/jssc.2008.922385

Cited by 31 publications

(11 citation statements)

References 20 publications

(22 reference statements)

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“…In the amplifiers implemented here, a gain per stage of 6. gain-bandwidth product amplifiers that are designed in various Si CMOS and SiGe BiCMOS processes (see [1] and [17] and [19]- [27]). Note that these distributed amplifiers are optimized based on transistor size, number of stages, and transmission line dimensions to achieve the largest possible bandwidths or gain-bandwidth products.…”

Section: Discussionmentioning

confidence: 99%

“…Si and SiGe RF and microwave integrated circuits often use shielded microstrip-mode CPW lines and shielded inductors to provide isolation of these components from the Si substrate in which the underlying ground plane prevents the electromagnetic field from penetrating the lossy substrate [17]- [20]. In order to investigate if shielding can provide additional substrate isolation in this mask programmable technology, we have performed HFSS simulation of -parameters of a CPW line with a ground plane underneath, as shown in Fig.…”

Section: A Cpw Transmission Linesmentioning

confidence: 99%

See 1 more Smart Citation

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Rabieirad

Martinez²,

Mohammadi

2009

IEEE Trans. Microwave Theory Techn.

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Abstract-A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 m) dielectric layer that enables very low loss lines ( 0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time.

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Section: Discussionmentioning

confidence: 99%

Section: A Cpw Transmission Linesmentioning

confidence: 99%

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Rabieirad

Martinez²,

Mohammadi

2009

IEEE Trans. Microwave Theory Techn.

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“…F OR millimeter-wave integrated amplifier design, the gain and efficiency, which have been limited by the low supply voltage of submicrometer CMOS processes [1], have been gradually increased using new design techniques [2]- [5]. To obtain high output power, the distributed-active-transformerbased CMOS power amplifier (PA) combines multiple power units, and new output power records have been achieved [6]- [9].…”

Section: Introductionmentioning

confidence: 99%

A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS

Guo

Brinkhoff

et al. 2011

IEEE Trans. Circuits Syst. II

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This brief presents the design of a band-tunable 60-GHz CMOS power amplifier using 65-nm standard CMOS technology. To achieve high gain and PAE over the whole 7-GHz frequency band, this amplifier utilizes a differential bandswitching circuit to tune the center frequency to the channel in use, whereas high-Q transformer matching and deep-neutralized differential pairs are employed to achieve high gain and PAE in a narrow bandwidth. The amplifier achieves saturated output power of 12.3 dBm and peak PAE of 20.4% with a 1-V supply and a 63-mA current. The peak gain is 17.1 dB at 59 GHz and 16.2 dB at 53.5 GHz for the two different frequency bands, respectively.Index Terms-Band tunable, millimeter-wave integrated circuits, neutralization, power amplifier (PA).

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“…The major limitations in sub-micron CMOS technology are the low breakdown voltage, high substrate loss, and low power density. Recently, a number of 60 GHz PAs were reported, with the highest output power below 12.3 dBm, power gain below 20 dB, and limited bandwidth [12]- [17].…”

Section: Introductionmentioning

confidence: 99%

A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

Kuo

Tsai

Lin

et al. 2009

IEEE Microw. Wireless Compon. Lett.

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A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured sat of 13.8 dBm, 1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under DD biased at 1.8 V. When DD is biased at 3 V, it exhibits sat of 18 dBm, 1 dB of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0 66 0 5 mm 2 . To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band. Index Terms-Broadband, CMOS, microwave monolithic integrated circuit (MMIC), power amplifier (PA), 60 GHz, V-band.

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A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Cited by 31 publications

References 20 publications

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS

A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

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