A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS

Bi, X. J.; Guo, Yong‐Xin; Brinkhoff, James; Jia, Lin; Wang, Lei; Xiong, Yong Zhong; Leong, Mook‐Seng; Lin, Fujiang

doi:10.1109/tcsii.2011.2168010

Cited by 13 publications

(2 citation statements)

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“…Table 1 summarizes the recently reported V-band PAs units in 65 nm bulk CMOS processes [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Measurement Resultsmentioning

confidence: 99%

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An ultra-wideband CMOS PA with dummy filling for reliability

Chang

et al. 2017

Solid-State Electronics

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A V-band power amplifier in a bulk 65 nm CMOS technology with a peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8 GHz to 79.6 GHz) is presented. The techniques to boost bandwidth and power efficiency are presented. In addition, the design of dummy filling to satisfy manufacturing density requirements while having negligible effects on performances is discussed in details. The PA features a three stage transformer coupled differential architecture with integrated input and output baluns on-chip. The PA achieves a measured saturated output power of 15.1 dBm and output 1 dB compression power of 12.9 dBm at 65 GHz. The peak power-added efficiency is 18.9 %. The entire PA occupies area of 0.31 mm 2 , while consuming 150 mW from a 1.25 V supply.

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“…Table 1 summarizes the recently reported V-band PAs units in 65 nm bulk CMOS processes [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Measurement Resultsmentioning

confidence: 99%

“…Also, distributed amplifiers usually occupy large chip area. A large number of 60 GHz PAs have been reported [1][2][3][4][5][6][7][8][9][10][11] over the past decade. However, trade-offs are still challenging between key specifications, such as gain, power efficiency, and bandwidth.…”

Section: Introductionmentioning

confidence: 99%