A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications

Mueller, Jan-Erik; Baureis, P.; Berger, O.; Boettner, T.; Bovolon, N.; Packeiser, G.; Zwicknagl, P.

doi:10.1109/gaas.1997.628282

Cited by 10 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The heterojunction bipolar transistor (HBT) technology is the most promising one due to the preponderant device physics characteristic, such as low output conductance, high early voltage and steady P value[l]- [4]. Usually, twoor three-stage structure was used in the MMIC power amplifier.…”

Section: Introductionmentioning

confidence: 99%

An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer

Zhu

Yang²,

Zhang³

et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits

View full text Add to dashboard Cite

An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. Thefabricated HBTMMIC PA exhibits an output power of24 dBm and a power-added efficiency as high as 3 7% at an operation voltage of6.5 V. 0-7803-9339-2/05/$20.00 ©2005 IEEE.

show abstract

Section: Introductionmentioning

confidence: 99%

An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer

Zhu

Yang²,

Zhang³

et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits

View full text Add to dashboard Cite

show abstract

A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors

Bovolon

Baureis

Muller

et al. 1998

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The keg advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods

show abstract