Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors

Bovolon, N.; Schultheis, R.; Muller, J.-E.; Zwicknagl, P.

doi:10.1109/16.822267

Cited by 12 publications

(2 citation statements)

References 17 publications

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“…It has been reported that H ϩ ions freed by electron injection passivate the B-E heterojunction defects and this is one of the reasons causing the burn-in effect in HBT's with a carbon-doped GaAs base region. 13 Although hydrogen passivation of B-E heterojunction defects possibly explains the electrical improvement of B-E junctions, it cannot explain the degradation of the B-C junction caused by the CPVS in Fig. 9͑b͒.…”

Section: Resultsmentioning

confidence: 94%

Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Chong

Chen

Houng

et al. 2004

Journal of Applied Physics

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Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor Two significantly abrupt increases of dc current gain ͑␤͒ at the opposite extremes of base-emitter voltages (V be ) linked by a relatively slight increase of ␤ in the range of 1.25рV be р1.75 V are found in InGaP/GaAs heterojunction bipolar transistors ͑HBT's͒. It has been proved that the burn-in effect directly causes the second abrupt increase of ␤ occurring at V be Ͼ1.75 V instead of elsewhere. In addition, choosing V be Ͼ1.75 V, a higher base-emitter voltage results in a faster increase rate with improvement in current gain transient. Based on these observations, a constant period of voltage stress ͑CPVS͒ with V be ϭ2.0 V and V ce ϭ3.0 V for 5 min with a specific choice of V be Ͼ1.75 V ͑the voltage range corresponding to the second abrupt increase of ␤͒ is thus applied to promote the electrical performance of HBT's. After applying a CPVS, the burn-in effect is substantially suppressed without showing any second abrupt increase of current gain. Although the current measured under both reverse and forward biases is greatly reduced for the base-emitter junction, a CPVS slightly degrades the electrical properties of a base-collector junction. Also, it has been proved that bulk recombination, rather than the surface recombination current, the base contact recombination, or the space-charge recombination, is the dominant base current component causing the burn-in effect. The electrical improvement of the base-emitter junction is due to the annihilation of H-related traps in the base region after a CPVS. Once H Ϫ ions form, we propose that these ions are too fast to drift toward the base-collector junction under the reverse bias of the base-collector voltage. After migration through the extrinsic base region, H Ϫ ions are supposed to be trapped near the base-collector space region, which results in the degradation of the base-collector junction after a CPVS.

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Section: Resultsmentioning

confidence: 94%

Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Chong

Chen

Houng

et al. 2004

Journal of Applied Physics

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“…Therefore, in the past decade, many studies have been performed for characterizing RF performance of different GaAs HBTs, where electrothermal effects are examined in both theoretical and experimental ways. Among these, it should be mentioned that temperature effects on direct current (dc) and small-signal behavior of an InGaP/GaAs HBT have been investigated in [3], short-term dc-current gain variation in a AlGaAs/GaAs HBT with high current density-low temperature stress applied has been examined in [4], and effects of structure layout on its thermal management of a GaAs integrated circuit (IC) have been studied in [5]. Further, thermal performance of a collector-up GaAs HBT with a novel thermal via structure underneath its fingers has been evaluated in [6], temperature-dependent current gains and offset voltages of both AlGaAs/ GaAs and InGaP/GaAs HBTs have been studied in [7], and the dynamic thermal analysis of a GaAs HBT in the frequency domain has been performed in [8].…”

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confidence: 99%

Electrothermal Effects on Performance of GaAs HBT Power Amplifier During Power Versus Time (PVT) Variation at GSM/DCS Bands

Lin

Zhou

Wang

et al. 2015

IEEE Trans. Microwave Theory Techn.

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Power versus time (PVT) variation is one of the most important features for describing electrothermal performance of RF power amplifiers (PAs) for global system for mobile communication/digital cellular system bands. The PA sometimes produces high power at the first time slot and low power at the second time slot, which results in similar temperature variation caused by its self-heating effect. Therefore, both theoretical and experimental investigations are carried out for capturing electrothermal effects on the performance of GaAs-based heterojunction bipolar transistor (HBT) PAs. The temperature distribution over the PA die is obtained using our in-house developed finite-element method algorithm and a thermal infrared scanner, respectively. In particular, the PVT variation of the PA for a two time slot, as well as a four time slot (i.e., 75% of its operation time is in the "power on" state) case is studied in detail. Furthermore, an improved design for the GaAs HBT PA chip is performed, fabricated, and tested with its PVT variation suppressed effectively. This study should be very useful for the development of PAs for many wireless communications. Index Terms-Electrothermaleffect, finite-element method (FEN), GaAs heterojunction bipolar transistor (HBT), Gaussian minimum shift keying (GMSK), global system for mobile communication (GSM)/digital cellular system (DCS), power amplifier (PA), power versus time (PVT).

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Heterojunction Bipolar Transistor

Prasad

2005

Encyclopedia of RF and Microwave Engineering

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The major advances in heterojunction bipolar transistor (HBT) technology since the mid‐1980s is covered in this article. The cutoff frequency ( f T ) and the maximum oscillation frequency ( f max ) have reached record highs. Indium phosphide (InP) HBTs have shown ( f T ) and ( f max ) in excess of 450 GHz and gate delays of 1.95 ps. Silicon–germanium (SiGe) HBTs have demonstrated 350 GHz ( f T ) and gate delays of 3.6 ps. The improved performance of the devices has resulted in impressive circuit results. Static frequency dividers operating at 152 GHz has been reported in InP HBT technology. SiGe HBT technology has demonstrated dynamic frequency dividers running at 110 GHz. Multiplexer/demultiplexer (MUX/DMUX) circuits operating at 40 Gbps (gigabits per second) were demonstrated with InP HBTs. On the other hand, 50‐Gbps 4–1 MUX/DMUX circuits have been shown with SiGe HBTs.

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Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors

Cited by 12 publications

References 17 publications

Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Electrothermal Effects on Performance of GaAs HBT Power Amplifier During Power Versus Time (PVT) Variation at GSM/DCS Bands

Heterojunction Bipolar Transistor

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