An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. Thefabricated HBTMMIC PA exhibits an output power of24 dBm and a power-added efficiency as high as 3 7% at an operation voltage of6.5 V. 0-7803-9339-2/05/$20.00 ©2005 IEEE.