A 2 V 2.4 GHz fully integrated CMOS LNA with Q-enhancement circuit

Abstract

A 2V 2.4GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise Amplifier) with negative resistance is proposed. The LNA is designed with 0.35um process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. In addition to using negative resistance reduce an output parasitic resistance of spiral inductor. A performance of LNA with negative resistance is detailed to present in this paper.

A comprehensive study and modeling of centre‐tap differentially driven single‐turn integrated inductors for 10‐GHz applications

“…Techniques using dual mode [1], multilayers [2], and meander-loop resonators [3] have been tested and found to provide good size reduction. Another type of filter using the so called slow-wave effect, the microstrip slow-wave open-loop resonator, was introduced in [4,5] and is considered to be the best one for mobile communication systems because of its simple shape, small size, low cost, and lack of performance degradation.…”

“…Monolithic inductors have been used extensively in many microwave and RF ICs such as low-noise amplifiers (LNAs), voltagecontrolled oscillators (VCOs), mixers, passive-element filters, impedance-matching networks, and so on [1][2][3][4]. On-chip inductors fabricated on either silicon or GaAs substrate always suffer from capacitive and magnetic losses due to integrated substrate, series metallization loss, and capacitive loss due to parasitic capacitance and resultant in low Q.…”

A highly reconfigurable single-ended low noise amplifier for software defined radio applications

“…A negative gm cell provides the user with control over the quality factor o f the resonant load. A negative gm cell grants the freedom to adjust the quality factor o f the resonant load [22], [23], thus granting freedom to adjust gain and bandw idth. Variable gain was achieved with th ree com m on-source (CS) FETs (Mi) in parallel at th e input.…”

“…Negative resistance/conductance cells have previously been used in LNAs to provide Qenhancement [22], [23]. Other negative resistance topologies as shown in [23] were considered, but the chosen topology was selected due to its ideally non-frequency dependent negative resistance.…”