2007
DOI: 10.1109/mwsym.2007.380288
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A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package

Abstract: A 2.5 Watt average power (15 Watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3X3 mm) surfacemount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 Watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.

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“…Table III shows a comparison between our work and other similar PA works in the literature. Various performances were achieved by others, using a range of technologies, dealing with a range of trade-offs such as lower output power versus higher efficiencies [7][8][9]; higher output powers/efficiencies using external matching networks [10,11]. This design achieves the multiband operation with a higher output power using a fully integrated PA approach with a low-cost SiGe:C process.…”
Section: Discussionmentioning
confidence: 99%
“…Table III shows a comparison between our work and other similar PA works in the literature. Various performances were achieved by others, using a range of technologies, dealing with a range of trade-offs such as lower output power versus higher efficiencies [7][8][9]; higher output powers/efficiencies using external matching networks [10,11]. This design achieves the multiband operation with a higher output power using a fully integrated PA approach with a low-cost SiGe:C process.…”
Section: Discussionmentioning
confidence: 99%