Performance comparison of a single and multiband power amplifiers using IHP 0.25 μm SIGe HBT technology

Abstract

In this work, a single-band power amplifier (PA) with a fixed-frequency/band output matching network and multiband PA with a switch-tuned output matching network is designed, using IHP (Innovations for High Performance), 0.25 lm-SiGe HBT process. The behavior of the amplifiers has been optimized for 2.4 GHz (WLAN), 3.6 GHz (UWBWiMAX), and 5.4 GHz (WLAN) frequency bands for a higher 1-dB compression point and efficiency. Multiband characteristics of the amplifier were obtained by using a MOS-based switching network. Two MOS switches were used for tuning the band of the output matching network. Postlayout simulations of the multiband-PA provided the following performance parameters: 1-dB compression point of 25.2 dBm, gain value of 36 dB, efficiency value of 12.8% operation and maximum output power of 26.8 dBm for the 2.4 GHz WLAN band, 1-dB compression point of 25.5 dBm, gain value of 32 dB, efficiency value of 13.3% and maximum output power of 26.6 dBm for the 3.6 GHz UWB-WiMAX band and 1-dB compression point of 24.8 dBm, gain value of 23 dB, efficiency value of 12.5% and maximum output power of 26.3 dBm for the 5.4 GHz WLAN band. For the fixed-band, at 3.6 GHz, the postlayout simulations resulted the following parameters: 1-dB compression point of 25.5 dBm, gain value of 32 dB, efficiency value of 18% and maximum output power value of 26.8 dBm. Measurement results of the single-band PA provided the following performance parameters: 1-dB compression point of 20.5 dBm, gain value of 23 dB and efficiency value of 7% operation for the 2.4 GHz band; 1-dB compression point of 25.5 dBm, gain value of 31.5 dB and efficiency value of 17.5% for the 3.6 GHz band; 1-dB compression point of 22.4 dBm, gain value of 24.4 dB and efficiency value of 9.5% for the 5.4 GHz band. Measurement results show that using multistage topologies and implementing each parasitic as part of the matching network component has provided a wider-band operation with higher output power levels, above 25 dBm, with SiGe:C process. These results proved that the PA, with switching/tunable output matching network, provides compatible performance parameters, when compared with the fixed-band PA. The ability of being capable of operation in different frequency bands with compatible performance parameters, when compared with fixed-band PA, multiband PA can be realized with additional less parasitics, area, and cost advantages.

Design of Reconfigurable Power Amplifier Based on Smith Chart Matching

“…Also in the United States, Georgia Institute of Technology's Joonhoi Hur and others [11] designed a multi-band multi-mode class D CMOS power amplifier using 0.18umCMOS technology through PMOS switching devices and tunable array resonators. Mehmet Kaynak of Sabanci University, Turkey, etc [12]. proposed a multi-band multimode power amplifier.…”