A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique

Kurniawan, Taufiq Alif; Yoshimasu, Toshihiko

doi:10.3390/electronics8010069

Cited by 4 publications

(3 citation statements)

References 24 publications

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“…Instead of using a single transistor, 2 switching n-channel MOS (nMOS) transistors were used to boost the performance of PA. It was succeeded 34.5% PAE at 0.18-m CMOS technology [12]. When the capacitive feedback model was used, PAE level increased to 63% [13].…”

Section: Introductionmentioning

confidence: 94%

RF Blocks for Biomedical Engineering

Kazanci¹

2021

El-Cezeri Fen Ve Mühendislik Dergisi

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Radio Frequency (RF) power amplifier (PA), power oscillator (PO), mixer, and their test circuit simulation results were presented for biomedical engineering applications. The novel efficient Class-E type RF PA was designed, and a schematic circuit was simulated. RF circuit blocks were designed and implemented at the 130 nanometers (nm) standard CMOS RF technology. Schematic test circuit simulations were tested with antenna connection which includes two-wire bonding inductances and antenna inner resistance. According to the circuit simulation results, no extra mismatch tuning circuit was needed between PA, PO, and mixer output and antenna input stages. For demonstration purposes, 33 GHz extremely high frequency (EHF) band PA input voltage was applied at 300 mV peak-to-peak (pp) voltage level. Technology standard 1V RF n-channel Metal-Oxide-Silicon (MOS) transistor was used as a Class-E type active transistor switch. For PA circuit simulation, test results show that the proposed circuit runs better than traditional Class-E type RF PAs. 70% power amplifier efficiency (PAE) for -8.5 dBm power input at 33 GHz RF input frequency for 40 harmonics and 15 steps in the harmonic shoot balance mode was achieved. The whole circuit blocks were designed and implemented for biomedical engineering which was specifically requested for the glucose detection system.

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Section: Introductionmentioning

confidence: 94%

RF Blocks for Biomedical Engineering

Kazanci¹

2021

El-Cezeri Fen Ve Mühendislik Dergisi

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“…In addition to the research in transistors and memory devices, this issue has collected important research on solar cells based on ZnO/Si heterojunctions [13], Bi-doped and Bi-Er co-doped optical fibers [14], high-performance graphene electrolyte double-layer capacitors [15], quantum-dot and sample-grating semiconductor optical amplifiers [16], a transmission method to determine the complex conductivity of thin strips [17], and a high-efficiency CMOS power amplifier with a dual-switching transistor [18].…”

Section: The Current Research Trendsmentioning

confidence: 99%

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Zhu

2019

Electronics

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“…The power supply voltage in these designs is much higher than 1 V. In addition, a two-way power combining is utilized in these designs, which results in large die size occupation. The CMOS PA reported in [27] uses 1 V power supply and achieves a much higher peak PAE of 34.5%, but it works in switching mode. Thus, it can hardly supports modern modulation schemes, which require high linearity.…”

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confidence: 99%

A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

Yang

Lee

et al. 2020

Electronics

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For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In the proposed design, a 40-nm standard CMOS process is used for higher integration with other RF building blocks, compared with other CMOS PA designs with larger process node. Transistor cells are designed with neutralization capacitors to increase stability and gain performance of the PA. As a trade-off among gain, output power, and PAE, the transistor cells in driving stage and power stage are biased for class A and class AB operation, respectively. Both transistor cells consist of two transistors working in differential mode. Furthermore, transformer-based matching networks (TMNs) are used to realize a two-stage X-band CMOS PA with compact size. The PA achieves an effective conductivity (EC) of 117.5, which is among the highest in recently reported X-band PAs in CMOS technology. The PA also attains a saturated output power (Psat) of 20.7 dBm, a peak PAE of 22.4%, and a gain of 25.6 dB at the center frequency of 10 GHz under a 1 V supply in 40-nm CMOS.

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A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique

Cited by 4 publications

References 24 publications

RF Blocks for Biomedical Engineering

RF Blocks for Biomedical Engineering

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

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