A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology

Han, Chuang; Tao, Hongqi

doi:10.23919/eumic.2019.8909556

Cited by 7 publications

(12 citation statements)

References 5 publications

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“…Combing the distributed input and RM output stages, the PAE is improved [14]. However, an extra expensive process with the SiC substrate reduced to 50 μm is used to reduce the parasitic inductance of the bottom hole [14]. It should be noticed that these two PAs are measured in the pulsed mode [3,14].…”

Section: Measured Resultsmentioning

confidence: 99%

“…A GaN RM PA using a 3‐stacked FET can provide 40.1–41.6 dBm P sat with PAE of 11%–29%, covering 2–20 GHz but below the millimetre wave [13]. In the mm‐wave band, a GaN/SiC RM PA adoptes DA in the input stage and RM in the output stage, its output power and PAE are 40.2–42.5 dBm and 15%–27% measured in the pulsed mode [14]. In order to reduce the parasitic inductance of the bottom hole, an extra process reduces the expensive 100 μm SiC substrate to 50 μm, increasing the cost [14].…”

Section: Introductionmentioning

confidence: 99%

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Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Chen

Luo³

et al. 2021

IET Microwaves Antenna & Prop

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A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18-40 GHz are proposed by using one-order and two-order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power-added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one-order STN, the impedance transformation ratio (T 1N ) has a maximum value (T MAX_1N ), limiting the output power. A two-order STN is proposed, and the impedance transformation ratio maximum (T MAX_2N ) can be improved to (T MAX_1N ) 2 . The result of this paper will be helpful for wideband high-power amplifier applications.

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Section: Measured Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Chen

Luo³

et al. 2021

IET Microwaves Antenna & Prop

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“…In terms of bandwidth, distributed amplifiers [6], [7] surpass reactively matched amplifiers considerably, easily exceeding 50% of RBW. On the other hand, distributed amplifiers also have disadvantages compared to reactively matched topologies, in which they require careful design of the power distribution among the circuit's transistors [6] and often reach limited efficiency [8].…”

Section: State Of the Artmentioning

confidence: 99%

“…These types of MMICs generally achieve up to about 20% of relative bandwidth (RBW) [4], [5]. On the other hand, using traveling-wave topologies, fractional bandwidths exceeding 50% have been shown [6], [7]. However, MMICs employing traveling-wave topologies may exhibit certain disadvantages, among them an uneven heat distribution [6] and comparatively low-efficiency figures [8].…”

Section: Introductionmentioning

confidence: 99%

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Neininger

John

Thome

et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical response in a densely routed, massively parallelized layout. To that end, we develop a comprehensive study on the application of space-mapping techniques toward the design of high-power amplifiers (HPAs). We derive three reference design procedures and compare their performance in terms of convergence, speed, and practicality when laying out a densely routed HPA interstage matching network. Subsequently, we demonstrate the usefulness of the study by designing the networks of a compact three-stage eight-way wideband HPA in the Ka-band. The processed monolithic microwave integrated circuit features a 1-dB large-signal bandwidth of more than 11 GHz (a fractional bandwidth of 32.8%) and thus covers most of the Ka-band with an output power exceeding 6 W in 3 dB of gain compression. This demonstrates the highest combination of power and bandwidth to date using a reactively matched topology in the Ka-band.

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“…Indeed, aspects such as lower cost, graceful degradation, form factor, etc., can introduce significant benefits at satellite level. In this context, several monolithic microwave integrated circuits (MMICs) PAs have been recently demonstrated up to K/Q band [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

A high efficiency 10W MMIC PA for K-b and satellite communications

Colantonio

Giofrè

Vitobello³

et al. 2021

Int. J. Microw. Wireless Technol.

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This paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of such technology, in order to keep the junction temperature in all devices below 160°C in the worst-case condition (i.e., maximum environmental temperature of 85°C). The realized MMIC, based on a three-stage architecture, was first characterized on-wafer in pulsed regime and, subsequently, mounted in a test-jig and characterized under continuous wave operating conditions. In 17.3–20.2 GHz operating bandwidth, the built amplifier provides an output power >40 dBm with a power added efficiency close to 30% (peak >40%) and 22 dB of power gain.

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A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology

Cited by 7 publications

References 5 publications

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

A high efficiency 10W MMIC PA for K-b and satellite communications

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