A 160 Gb/s (4×40) WDM O-band Tx subassembly using a 4-CH array of silicon rings copackaged with a SiGe BiCMOS IC driver

Moralis-Pegios, M.; Pitris, S.; Alexoudi, T.; Terzenidis, N.; Ramon, H.; Lambrecht, J.; Bauwelinck, J.; Yin, Xiaoxing; Ban, Yoojin; Heyn, P. De; Campenhout, Joris Van; Lamprecht, T.; Lehnman, A.; Pleros, N.

doi:10.1049/cp.2019.0914

Cited by 1 publication

(2 citation statements)

References 7 publications

(8 reference statements)

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“…The purpose of the Si-Pho WDM mid-board TxRx attached to every socket is to optically interface the processor with the EOPCB. Following our recent work on a 4-channel O-band WDM Tx co-packaged with its electronic DR-TIA chips operating at 160 (4×40) Gb/s [10] and up to 200 (4×50) Gb/s capacities [21], we present here its extended WDM Tx version, i.e. an 8-channel O-band WDM TxRx capable to provide up to 400 (8×50) Gb/s aggregate Tx capacities and we report on its characterization and evaluation.…”

Section: (8×50) Gb/s Si-photonic Ring-based Txmentioning

confidence: 99%

“…In this scenario, the O-band (1260-1360 nm) spectral region offers significant advantages compared to C-band, since optical polymer waveguides embedded in EOPCBs typically offer a much lower waveguide loss figure in this spectral region [9], while at the same time ensures maximum compatibility with the standard datacom and computercom fiber-based infrastructure where O-band is the dominant operational spectral regime. Towards this goal, many recent novel demonstrations of Si-photonic high-speed TxRxs [10]- [13], Si-photonic cyclic-AWGR routing elements [14] and low-loss polymer EOPCBs [9] have already indicated the availability of all necessary building blocks required for realizing high-speed O-band AWGR-based optical MSB interconnections.…”

Section: Introductionmentioning

confidence: 99%

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400 Gb/s Silicon Photonic Transmitter and Routing WDM Technologies for Glueless 8-Socket Chip-to-Chip Interconnects

Pitris

Mitsolidou

Moralis-Pegios

et al. 2020

J. Lightwave Technol.

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Arrayed Waveguide Grating Router (AWGR)based interconnections for Multi-Socket Server Boards (MSBs) have been identified as a promising solution to replace the electrical interconnects in glueless MSBs towards boosting processing performance. In this paper, we present an 8-socket glueless optical flat-topology Wavelength Division Multiplexing (WDM)-based point-to-point (P2P) interconnect pursued within the H2020 ICT project ICT-STREAMS and we report on our latest achievements in the deployment of the constituent silicon (Si)-photonic transmitter and routing building blocks, exploiting experimentally obtained performance metrics for analyzing the 8-socket chip-to-chip (C2C) connectivity in terms of throughput and energy efficiency. We demonstrate an 8-channel WDM Siphotonic microring-based transmitter (Tx) capable of providing 400 (8×50) Gb/s non-return-to-zero (NRZ) Tx capacity and an 8×8 Coarse-WDM (CWDM) Si-AWGR with verified cyclic data routing capability in O-band. Following an overview of our recently demonstrated crosstalk (XT)-aware wavelength allocation scheme, that enables fully-loaded AWGR-based interconnects even for typical sub-optimal XT values of silicon integrated CWDM AWGRs, we validate the performance of a full-scale 8-socket interconnect architecture through physical layer simulations exploiting experimentally-verified simulation models for the underlying Si-photonic Tx and routing circuits. This analysis reveals a total aggregate capacity of 1.4 Tb/s for an 8-socket interconnect when operating with 25 Gb/s line-rates, which can scale to 2.8 Tb/s at an energy efficiency of just 5.02 pJ/bit by exploiting the experimentally verified building block performance at 50 Gb/s line. This highlights the perspectives for up to 69% energy savings compared to the standard QuickPath Interconnect (QPI) typically employed in electronic glueless MSB interconnects, while scaling the singlehop flat connectivity from 4-to 8-socket interconnection systems.

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Section: (8×50) Gb/s Si-photonic Ring-based Txmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

400 Gb/s Silicon Photonic Transmitter and Routing WDM Technologies for Glueless 8-Socket Chip-to-Chip Interconnects

Pitris

Mitsolidou

Moralis-Pegios

et al. 2020

J. Lightwave Technol.

View full text Add to dashboard Cite

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A 160 Gb/s (4×40) WDM O-band Tx subassembly using a 4-CH array of silicon rings copackaged with a SiGe BiCMOS IC driver

Abstract: We demonstrate a 4-channel O-band transmitter comprising a Silicon Photonics RM array co-packaged with a SiGe BiCMOS integrated driver chip. 4×40 Gb/s data modulation with an average ER of 3.39 dB is reported, with the transmitter module exhibiting a high energy efficiency of 2.52 pJ/bit.

Cited by 1 publication

References 7 publications

400 Gb/s Silicon Photonic Transmitter and Routing WDM Technologies for Glueless 8-Socket Chip-to-Chip Interconnects

400 Gb/s Silicon Photonic Transmitter and Routing WDM Technologies for Glueless 8-Socket Chip-to-Chip Interconnects

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