2011
DOI: 10.1109/jssc.2010.2091324
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A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance

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Cited by 19 publications
(7 citation statements)
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“…The low power consumption on the hard disk could be explained by the combined use of cache memory and hard disk in the web portal. These mechanisms can significantly improve both energy efficiency [ 108 ] and performance [ 109 ], avoiding the long waiting time and high power consumption of hard disks’ spin-ups [ 110 ].…”
Section: Resultsmentioning
confidence: 99%
“…The low power consumption on the hard disk could be explained by the combined use of cache memory and hard disk in the web portal. These mechanisms can significantly improve both energy efficiency [ 108 ] and performance [ 109 ], avoiding the long waiting time and high power consumption of hard disks’ spin-ups [ 110 ].…”
Section: Resultsmentioning
confidence: 99%
“…In 2009, Toshiba demonstrated the first 128 Mb Chain FeRAM samples [13]. The write/read speed of this memory reaches 1.6 Gb/s, which is comparable to that of standard semiconductor DRAM.…”
Section: Ferroelectric Memory Typesmentioning
confidence: 95%
“…The minimum determinable polarization charge in a capacitor is ~20-30 fC (femtocoulomb) on an area of 10 4 nm 2 (for PbZr 1 -x Ti x O 3 ), which is the physical limit set by the charge distribution discreteness in the crystal lattice of a ferroelectric [31]. This limits the volume of practically accessible planar memory to 128 Mb in the case of PbZr 1 -x Ti x O 3 [13] and to 256 Mb in the case of BiFeO 3 (noncommercial sample from Fujitsu) [14].…”
Section: Ferroelectric Memory Typesmentioning
confidence: 99%
“…It also enables the concurrent writing of 0 or 1 states without needing to elevate BLs, enhancing write efficiency in MRAM. Figure 3f illustrates a 1T-1R bitcell occupying an area of 20 F 2 [54], which is more compact than earlier FRAM [89,90], STT-MRAM [16,76], and CBRAM [91,92] designs. The RRAM was equipped with a novel sense amplifier and a write-and-verify (WAV) voltage generator to increase the read and write yield.…”
Section: Design Considerations For Nvm In Mcumentioning
confidence: 99%