2013
DOI: 10.1134/s0020168513100038
|View full text |Cite
|
Sign up to set email alerts
|

Application of BiFeO3 and Bi4Ti3O12 in ferroelectric memory, phase shifters of a phased array, and microwave HEMTs

Abstract: This paper examines the main applications of bismuth ferrite and bismuth titanate and demon strates their potential applications in spintronics and radioelectronics.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
6
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(6 citation statements)
references
References 67 publications
0
6
0
Order By: Relevance
“…While having both its ferroelectric Curie temperature Tc ~ 1100 K and antiferromagnetic Néel temperature TN ~ 640 K it has attracted a lot of attention [2,3]. As a multiferroic, it can be used in magnetic sensors [4], energy harvesting devices [5] or memory devices [6]. As a piezoelectric material, it is a potential substitute for currently most used PbZrxTi1-xO3 due to enormously high polarization being measured in the form of thin films [7].…”
Section: Introductionmentioning
confidence: 99%
“…While having both its ferroelectric Curie temperature Tc ~ 1100 K and antiferromagnetic Néel temperature TN ~ 640 K it has attracted a lot of attention [2,3]. As a multiferroic, it can be used in magnetic sensors [4], energy harvesting devices [5] or memory devices [6]. As a piezoelectric material, it is a potential substitute for currently most used PbZrxTi1-xO3 due to enormously high polarization being measured in the form of thin films [7].…”
Section: Introductionmentioning
confidence: 99%
“…The results can be used to produce bulk composite materials, as well as for the manufacture of devices requiring a rapid remagnetization using minimal energy, for example, transformer coils [16,17]. The synthesized films, along with other oxides of transition metals [18,19] can act as catalysts for the formation of functional layers by thermal oxidation of binary semiconductor compounds A 3 B 5 .…”
Section: Resultsmentioning
confidence: 99%
“…High values of , the temperature of the antiferromagnetic (TN  370 С) and ferroelectric (the TC  827 С) transitions in bismuth ferrite predetermined his prospects of wide application in spintronics, sensory and microwave technology, devices for converting, recording, reading and storing information [6] and other. Analysis of the literature shows a certain spread of values of the dielectric and magnetic properties, Curie and Neel temperatures in nanostructures based on bismuth ferrite, what may be due to size effects, different regimes of annealing (temperature -time, the surrounding atmosphere), the influence of impurities.…”
Section: Methods For the Prepration Of Bis-muth Ferrite Nanopowdersmentioning
confidence: 99%
“…The sol-gel method [6] with using bismuth nitrate and iron nitrate, followed by annealing at a temperature of 600 o C for 30 minutes. The method does not provide a monophasic composition and requires additional procedures for the purification of the resulting material from Bi2Fe4O9, Bi36Fe24O57 and Bi2O3 impurities.…”
Section: Methods For the Prepration Of Bis-muth Ferrite Nanopowdersmentioning
confidence: 99%