A 1 W 830 MHz monolithic BiCMOS power amplifier

Wong, S.L.; Bhimnathwala, H.; Luo, S.; Halali, B.; Navid, S.

doi:10.1109/isscc.1996.488510

Cited by 14 publications

(2 citation statements)

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“…When using bipolar technologies, the breakdown voltage is off course equal to VBceo of the nPn transistor. Therefore, our design has the second highest figure of merit for a fully integrated power amplifier, only the BICMOS design of [16] does better. We have set it equal to 10 K. From literature we selected twelve reference papers [3][4][5][15][16][17][18][19][20][21][22][23], and calculated the figure of merit for each of these PA. For this realization following numbers are being used in expression (4): P out = 0.07 W, unbalanced PAE = 25.8%, power gain = 30 dB, V breakdown = 5 V, F max = 45 GHz, f = 2.45 GHz.…”

Section: A Figure Of Merit For Saturated Pamentioning

confidence: 93%

“…This is acceptable, due to the fact that the power control of the amplifier will be done by varying the DC voltage of the last stage. From [7,8] and [16] we know that this solution provides better output power and power added efficiency than a classical class E design. Therefore the Drain Efficiency (DE PA ) of the last stage is a good indicator for the PAE that will be reached.…”

Section: Design Trade-off'smentioning

confidence: 99%

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A Fully Integrated Class 1 Bluetooth 0.25 μm CMOS PA

Mertens

Steyaert

2005

Analog Integr Circ Sig Process

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A fully integrated 0.25 µm CMOS bluetooth class 1 power amplifier is presented. On this chip all inductors and decoupling capacitors are situated on the silicon die. Due to the high level of integration, a cheap flip chip assembly method has been used. The chip delivers 138 mW (21.4 dBm) of output power with a power added efficiency of 25.8%. When the amplifier is tuned to its optimum frequency of 2.1 GHz, the output power increases to 184 mW and the power added efficiency increases to 29.5%. To compare the performance of this realisation with other recently published PA, a figure of merit for saturated (switched) power amplifiers is introduced.

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