A 1.2 V Reactive-Feedback 3.1-10.6 GHz Ultrawideband Low-Noise Amplifier in 0.13 um CMOS

Reiha, M.T.; Long, John R.; Pekarik, Jack

doi:10.1109/rfic.2006.1651086

Cited by 52 publications

(73 citation statements)

References 5 publications

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“…The noise figure measurements are made with a spectrum analyzer and a noise source taking into account the mismatch at LNA output. The measurement results are summarized in Table 2 (Yu et al, 2007) 0.18 2.7-9.1 1.57 7 10 3.8-6.9 <-10 +1 (Heydari, 2007) 0.18 0.1-11 0.76 21.6 8 2.9 <-12 -3.5 0.18 2-11.5 0.33 13.4 14.8 3.1-4 <-10 +3 (Chen & Huang, 2007) 0.18 2.8-7.2 1.63 32 19.1 3-3.8 <-5 -1 (Reiha & Long, 2007) 0.13 3.1-10.6 0.87 9 15.1 2.1-2.8 <-10 -8.5 (Liao & Liu, 2007) 0.18 1.2-11.9 0.59 20 9.7 4.5-5.1 <-11 -6.2 (Shim et al, 2007) 0.18 0.4-10 0.42 12 12.4 4.4-6.5 <-10 -6 (Bevilacqua & Nikenejad, 2007) 0.18 2.9-11 0. This work 4,6 0 .13 6.4-7.8 1 0.77 28 35 3 3.2-4.4 <-7 -1 1dB bandwidth ; 2 0.5dB bandwidth ; 3 voltage gain ; 4 simulated value; 5 differential output, 6 fully differential …”

Section: Some Resultsmentioning

confidence: 99%

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Design of CMOS UWB LNA

Gaubert¹,

Bourdel²

2010

Ultra Wideband

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Section: Some Resultsmentioning

confidence: 99%

“…The noise figure is lower than 7dB in the 2-9 GHz frequency range and this LNA uses 3 inductors. Reiha has used a feedback topology in a 0.13m technology (Reiha et Long, 2007). However in this design the feedback is implemented by means of on chip inductive transformers.…”

Section: Feedback Amplifiersmentioning

confidence: 99%

Design of CMOS UWB LNA

Gaubert¹,

Bourdel²

2010

Ultra Wideband

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“…Reverse isolation is better than 37 dB across the 3.1 to 10.6 GHz band. The [5] 2.9 0.87 15.1 ± 1.4 S 11,max < −9.9 9 (3.0-11) (3.1-10.6) (3.1-10.6) 0.18µm SiGe HBT BiCMOS [2] 3.1 0.72 20.3 − 3.5 S 11,max < −7.2 26 (without buffer) (3.0-10.0) (3.0-10.0) (3.0-10.0) 0.8µm SiGe HBT [6] 3.2 0.17 23.5 − 0.6 S 11,max < −8.5 55 (3.1-10.6) (3.1-10.6) (3.1-10.6) 0.18µm SiGe BiCMOS [7] 3.3 0.88 13 − 3 S 11,max < − 7 measured 50 Ω noise figure is depicted in Fig. 6.…”

Section: Measurement Resultsmentioning

confidence: 99%

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

Dederer¹,

Chartier²,

Feger³

et al. 2007

2007 European Conference on Wireless Technologies

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Abstract-We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 µm SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm 2 .

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“…Up to now, numerous transformer feedback structures have been published [3][4][5][6][7]. Reactive components should be used inevitably for wideband input and output matching or inter-stage matching [1], while the silicon area increases in comparison with resistive feedback or CG amplifier.…”

Section: Introductionmentioning

confidence: 99%

A Transformer Feedback CMOS LNA for UWB Application

Jeon¹,

Kim²,

Kim³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A transformer feedback low-noise amplifier (LNA) is implemented in a standard 0.18 μm CMOS process, which exploits drain-to-gate transformer feedback technique for wideband input matching and operates across entire 3~5 GHz ultra-wideband (UWB). The proposed LNA achieves power gain above 9.5 dB, input return loss less than 15.0 dB, and noise figure below 4.8 dB, while consuming 8.1 mW from a 1.8-V supply. To the authors' knowledge, drain-to-gate transformer feedback for wideband input matching cascode LNA is the first adopted technique for UWB application.

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A 1.2 V Reactive-Feedback 3.1-10.6 GHz Ultrawideband Low-Noise Amplifier in 0.13 um CMOS

Cited by 52 publications

References 5 publications

Design of CMOS UWB LNA

Design of CMOS UWB LNA

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

A Transformer Feedback CMOS LNA for UWB Application

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