Abstract-A 3.1-to-10.6 GHz Impulse-UWB correlation receiver in a 0.8 μm Si/SiGe HBT technology is presented. The fully monolithic receiver with 0.8 mm 2 chip size comprises a low-noise amplifier with maximum noise figure of 3.2 dB, two single-ended to differential converters, an analog correlator and a template pulse generator approximating the fifth-derivative of a Gaussian impulse. It operates with pulse repetition rates up to 900 MHz (IF bandwidth limited) with a total power consumption of 200 mW.
Abstract-In this work, the authors present a fully integrated, fully differential amplifier operating at 79 GHz using a highspeed Si/SiGe hetero-bipolar technology. This amplifier needs a single supply voltage and shows high performance such as high gain, excellent reverse isolation and low power consumption (90 mW at 3 V supply voltage). This result was achieved by using multi-stage cascode topology and a thin-film microstrip line based design. In addition, the frequency of operation can be easily adjusted within a wide range by changing the length of the matching network (by using focused ion beam or ultrasonic manipulator). A simple but efficient layout technique was used to easily measure single-endedly the differential integrated circuit, also at these high frequencies.
Abstract-We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 µm SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm 2 .
Distributed single-ended, distributed differential and lumped differential circuit concepts for realisation of linear broadband amplifiers are presented. Concept advantages and disadvantages are discussed. Demonstration circuits of the first two kinds have been fabricated, the third one being currently in fabrication. All three circuits utilise the same SiGe HBT technology. The amplifiers' 3 dB cut-off frequencies range from 32 GHz to 41 GHz. They are intended for use in 40 Gbit/s optical communication systems.
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