A 1.2 V bandgap reference with an additional 29.6 ppm/°C temperature stable output current

A current reference with wide temperature operation range and low temperature drift

“…According to [4], we get the following expression: $$\begin{equation}{V_{{\mathop{\rm BE}\nolimits} (T)}} = {V_{{\rm{G0}}}} - \left[ {{V_{{\rm{G0}}}} - {V_{{\mathop{\rm BE}\nolimits} 0({T_0})}}} \right]\frac{T}{{{T_0}}} + \left( {\eta - \delta } \right)\frac{{kT}}{q}\ln \frac{T}{{{T_0}}}\end{equation}$$where V G 0 is the bandgap voltage of the silicon at 0 K, and η and δ are processes related parameters, which represent the temperature variation of the mobility and that of the collector current. In Equation (), the intermediate term, [ V G0 − V BE0 ( T0 ) ] T/T 0 .…”

“…However, it is still difficult to design a high-accuracy reference current, especially for the design of power driver ICs. Recently, A 1 μA current reference with 29.6 ppm/ • C in −20 to 120 • C range is presented in [4], but it only stays at the simulation level. The β-multiplier based current reference with 105 ppm/ • C showed in [5], its TR is merely 0-110 • C. Although a pseudo-cascode structure based current reference in [6] can work in a large TR, its TC is still high (89 ppm/ • C).…”

A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology

“…3) PTAT+CTAT: they exploit the weighted sum between PTAT and CTAT current generators. The principle of the PTAT generation relies on ∆V BE /R (using BJTs); on the other hand, the CTAT temperature dependency is obtained by using the ratio between ∆V GS (or a V BE of a BJT) of NMOS transistors and a resistor [12], [14], [15], [19], [24], [27], [31], [32].…”