A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

Leong, K.M.K.H.; Mei, X.B.; Yoshida, W.; Liu, Po-Hsin; Zhou, Zeyang; Lange, M.; Lee, Ling-Shine; Padilla, Jose G.; Zamora, Alexis; Gorospe, B.; Nguyen, Khanh; Deal, W.R.

doi:10.1109/lmwc.2015.2421336

Cited by 72 publications

(39 citation statements)

References 8 publications

(9 reference statements)

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“…The amplifier was built in the 0.25-nm technology node and consisted of 10 common-source amplifier stages and delivered 9 dB of measured gain. An LNA in the same technology node was demonstrated by Leong et al [52], delivering 13.6 dB of gain with a noise figure as low as 11.1 dB at 850 GHz. The LNA consisted of 10 amplification stages.…”

Section: Review Of Reported Terahertz and Low-thz Sub-systems Withmentioning

confidence: 92%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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Section: Review Of Reported Terahertz and Low-thz Sub-systems Withmentioning

confidence: 92%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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“…In the past decade, maximum frequency of oscillation (fMAX) and current-gain cutoff frequency (fT) of InP HEMT have significantly increased and the amplifier operating frequencies have approached 1 THz for the first time [2][3].…”

Section: Advanced Inp Hemt Technologymentioning

confidence: 99%

“…The topology used for these high frequency circuits has been CPW, because of its low inductance to ground. These improvements together have resulted in LNAs at 0.67 THz [4] and more recently at 0.85 THz [3]. For example, in order to achieve 0.…”

Section: Advanced Inp Hemt Technologymentioning

confidence: 99%

Sub-millimeter wave InP technologies and integration techniques

Radisic

Leong

Scott

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.

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“…It also makes CPW and CPS versatile for designing components and chips based on different substrates and packaging them into a system. In communication systems, CPW in a ground-signal-ground (GSG) configuration is normally used for designing amplifiers [2][3][4][5], frequency doublers [6,7], mixers [8,9], power DACs (PDACs) [10,11] and interposer connections between different components [12,13]. Being different from CPW, CPS as well as ACPS are in a ground-signal (GS) configuration and they are used for designing baluns [14][15][16][17], antennas [18][19][20], and the electrodes of Mach-Zehnder modulators (MZMs) [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

Dong

Johansen

Zhurbenko

2018

Int. J. Microw. Wireless Technol.

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This paper presents an ultra-wideband coplanar waveguide (CPW)-to-asymmetric coplanar stripline (ACPS) transition based on aluminum nitride (AlN) substrate. The concepts of designing CPW, ACPS, and CPW-to-ACPS transition are explained. In order to suppress parasitic modes, vias going through AlN substrate are added along the ground traces. The signal trace is tapered out and chamfered to reduce the reflection caused by the termination of ground trace. The CPW-to-ACPS transition is designed, fabricated, and measured in a back-to-back configuration. The fabricated CPW-to-ACPS transition can provide a bandwidth of 165 GHz with an associated insertion loss of 3 dB.

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A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

Cited by 72 publications

References 8 publications

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Sub-millimeter wave InP technologies and integration techniques

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

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