A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Park, Donghyuk; Joo, Woong; Lee, Yunki; Nah, Seungjoo; Jeong, Heegeun; Kim, Bum Suk; Jung, Sungmoon; Lee, Jesuk; Kim, Yitae; Moon, Cheol; Park, Yongin; Lee, Seung-Wook; Han, Jinhwa; Jang, Dongyoung; Kwon, Hayoung; Cha, Seungwon; Kim, Mi-Hye; Lee, Haewon; Suh, Sungho

doi:10.1109/iedm19573.2019.8993487

Cited by 17 publications

(8 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…26. Compared to front-side illumination (FSI), backside illumination (BSI) has become another standard image sensor technology due to its superior quantum efficiency and fill factor [249] . In event sensors, the BSI process can greatly increase the fill factor of complex pixels.…”

Section: High Speed Dynamic Vision Sensorsmentioning

confidence: 99%

Trending IC design directions in 2022

Chan¹,

Cheng²,

Deng³

et al. 2022

J. Semicond.

View full text Add to dashboard Cite

For the non-stop demands for a better and smarter society, the number of electronic devices keeps increasing exponentially; and the computation power, communication data rate, smart sensing capability and intelligence are always not enough. Hardware supports software, while the integrated circuit (IC) is the core of hardware. In this long review paper, we summarize and discuss recent trending IC design directions and challenges, and try to give the readers big/cool pictures on each selected small/hot topics. We divide the trends into the following six categories, namely, 1) machine learning and artificial intelligence (AI) chips, 2) communication ICs, 3) data converters, 4) power converters, 5) imagers and range sensors, 6) emerging directions. Hope you find this paper useful for your future research and works.

show abstract

Section: High Speed Dynamic Vision Sensorsmentioning

confidence: 99%

Trending IC design directions in 2022

Chan¹,

Cheng²,

Deng³

et al. 2022

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…Furthermore, the control logic proposed in Ref. [2,14,[22][23][24][25][26][27][28][29] is not suitable for continuous conversion, while the adaptive conversion logic can realise the continuous mode conversion without losing data.…”

Section: Overall Simulationmentioning

confidence: 99%

“…In addition, referred to the design in Ref. [27][28][29], due to the compatibility of dual gain, additional expansion capacitors have to be added, which leads to the increase in area. It is also noticeable that in Ref.…”

Section: Overall Simulationmentioning

confidence: 99%

Design of a multi‐mode digital pixel with conversion data protection

Kong

Chang

2022

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

With the development of semiconductor technology, digital pixel has received widespread attention and is applied to various electronic products. However, due to the limitation of area, it forms a challenging task to design a digital pixel with multiple modes. In this paper, a pulse width modulation based digital pixel is proposed, which is compatible with five different modes. By using the multi-purpose capacitors and static random access memory structure, it can realise multi-mode conversion in an equivalent area to that of the single mode digital pixel without performance degradation. Furthermore, a corresponding logic control method is developed, such that the integrity of the frame data is ensured during mode conversion. The simulation result of our proposed digital pixel in Tower Jazz 0.18 μm process shows that in the bright field it achieves a dynamic range of 67 dB. In the dark field, it achieves a conversion gain up to 13.91 μV/e−, with input noise of 37.89 e−per pixel after correlated double sampling.

show abstract

“…Jang et al achieved excellent color sensitivity and signal-tonoise ratio (SNR) by using Tetra-and Nona-mode remosaic schemes, even under low illumination conditions [16], [17]. Park et al and Joe et al improved the sensitivity and Y-SNR by adopting a low-reflection material as the CF isolation grid in a buried CF structure [18], [19]. Huang et al and Yan et al fabricated a highly planarized coating film through a twostep spin-coating process [20] and spin-coating process with a vacuum treatment technique [21] on topographical substrates.…”

Section: Introductionmentioning

confidence: 99%

In-Depth Study of 3D Color-Resist Coating Process for Optically Uniform Image Sensors

et al. 2021

View full text Add to dashboard Cite

The color filter required for manufacturing a CMOS image sensor was redeveloped to optimize its optical uniformity. An in-depth study of the three-dimensional (3D) coating process and how it gives rise to various radial-shaped striation patterns was conducted. These radial-shaped striation patterns were systematically investigated with reference to two types of patterns: the orthogonal type found only at the orthogonal edges of the wafer and the diagonal type found mostly at the corner of each quadrant. The formation of the orthogonal pattern was based on the wide standing wave created by the incident force of the spreading color photoresist (PR) and the reflective force from the bump pads acting as coating barriers. The diagonal pattern was found to be generated by the turbulent wakes created behind the bump pads by the drag force, which interfered with the coating flow. An in-depth study using Ansys CFX software and an inline inspection tool revealed that lowering the viscosity of the color PR material is a key factor for improving the phenomenon whereby the 3D striation patterns of the orthogonal and diagonal types are formed. Based on this finding, it was possible to drastically reduce the formation of the 3D striation patterns by decreasing the viscosity of the material comprising each color PR. This study provides not only an empirical and theoretical understanding of the 3D color PR coating mechanism, but also guidelines for future color filter processes.

show abstract

A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Cited by 17 publications

References 1 publication

Trending IC design directions in 2022

Trending IC design directions in 2022

Design of a multi‐mode digital pixel with conversion data protection

In-Depth Study of 3D Color-Resist Coating Process for Optically Uniform Image Sensors

Contact Info

Product

Resources

About