A 0.6-V Low Power UWB CMOS LNA

Abstract

This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-m CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6 V, the integrated UWB CMOS LNA consumes 7 mW. The measured gain of the LNA is 10 dB with the bandwidth from 2.7 to 9.1 GHz. The input and output return loss is more than 10 dB. The noise figure of the LNA varies from 3.8 to 6.9 dB, with the average noise figure of 4.65 dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt.Index Terms-Broadband, CMOS, distributed amplifier, low noise amplifier (LNA), low power, ultra-wideband (UWB).

A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

“…To summarize the results, the overall findings verify the proposed standard as a viable sub-micron mechanism to control the operating bandwidth of a low noise wideband amplifier. Table 1 documents the synopsis of the 90 nm amplifier performance to make a comparative assessment with regard to published results of millimeter wave deep sub-micron amplifiers [11][12][13][17][18][19][20][21][22] The proposed amplifier provides better port-isolation as calculated from the reflection parameters with low noise and reduced power penalty. To establish the relative merits of this microwave amplifier a figure of merit parameter (FOM) is defined by the equation…”

“…To introduce wideband characteristics to this component, designers are always looking for raising the operating bandwidth of a receiver front-end and reducing its overall power requirements [8]. In this regard, K and K band frequencies (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27) are deemed suitable for a microwave low noise amplifier for reliable high-speed short-distance transmission.…”

Design and implementation of UWB CMOS LC filters LNA for carrier less impulse radio receivers

“…Indeed the substrate noise is amplified by the high voltage gain of the LNA and sampled by the ADC. When efficient shielding and grounding techniques are not used substrate noise level as high than -55 dBm may be measured at the LNA input [16,17].…”

“…Figure 12 shows the EM models of conventional and modified layouts of the LNA input matching cell. The noise is injected through a metallic plane instead of a full VCO implementation [16,17]. The Fig.…”

A 1V folded common-gate CMOS LNA for full UWB band

“…Full UWB-band LNAs designed using several topologies have recently been published, such as distributed amplifiers [4], feedback amplifiers [5,6], common gate [7,2,8], or LC ladder filters LNA [1]. With technology scaling, short channel devices suffer from poor linearity as the low supply voltage is mandated and due to high field mobility effect.…”