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This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-m CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6 V, the integrated UWB CMOS LNA consumes 7 mW. The measured gain of the LNA is 10 dB with the bandwidth from 2.7 to 9.1 GHz. The input and output return loss is more than 10 dB. The noise figure of the LNA varies from 3.8 to 6.9 dB, with the average noise figure of 4.65 dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt.Index Terms-Broadband, CMOS, distributed amplifier, low noise amplifier (LNA), low power, ultra-wideband (UWB).

This letter presents a 0.18 m CMOS dual-band frequency synthesizer with charge-pump current mismatch calibration to reduce reference spurs. To enhance calibration accuracy the high-resolution phase detector (HRPD) is incorporated in this work. The measured output spur level is less than dBc after the calibration circuits are activated and the reference spur reduction is more than 5.6 dB throughout the whole frequency range. The frequency synthesizer draws 16 mA from a 1.8 V power supply, and the covered frequency bands are 5.18-5.32 GHz and 5.74-5.82 GHz.

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