A 0.54-0.55 THz 2&amp;#x00D7;4 coherent source array with EIRP of 24.4 dBm in 65nm CMOS technology

Zhao, Yan; Lu, Hsin-Chia; Chen, Hong-Pei; Chang, Yu-Teng; Huang, Ruijie; Chen, Huan-Neng; Jou, Chewn-Pu; Hsueh, Fu-Lung; Chang, M.F.

doi:10.1109/mwsym.2015.7166806

Cited by 27 publications

(11 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 is extracted and no electrode is required to be connected to the ground. Consequently, the model developed here is also applicable for the situations when the transistors are used as three-port networks (i.e., the transistors in Colpitts oscillators and the injection transistors in injection-locked frequency dividers [29], [32]).…”

Section: Modeling Of Transistor Interconnect Parasiticsmentioning

confidence: 99%

“…Quadruple-push oscillators have been demonstrated to generate signals at 0.55 and 0.87 THz using 45and 65-nm CMOS technologies, respectively [30], [31]. In [32], a 0.55-THz radiating source array based on coupled harmonic oscillators has been reported for a 65-nm CMOS technology. Recently, a 0.56-THz phase-locked frequency synthesizer incorporating a harmonic oscillator has been implemented in a 65-nm CMOS technology [29].…”

mentioning

confidence: 99%

See 1 more Smart Citation

A 525–556-GHz Radiating Source With a Dielectric Lens Antenna in 28-nm CMOS

Guo

Standaert

Reynaert

2018

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

This paper presents the design, implementation, and measurement of a 0.53-THz radiating source in a 28-nm bulk CMOS technology. An oscillator-tripler topology is employed to effectively generate and extract the third harmonic at 0.53 THz within a fully symmetrical layout. A dielectric lens is designed, fabricated, and mounted on top of the chip to enhance the antenna gain. During the design of the radiating source, a lumped model representing the transistor interconnect parasitics including the parasitic capacitances, resistances, and inductances is developed using a simulation-based modeling method. The accuracy of the developed model is validated by comparing the simulation and measurement of the 0.53-THz radiating source. The measured equivalent isotropically radiated power of the radiating source is-7.4 dBm at 527.6 GHz under 0.9-V supply voltage. According to the measured antenna directivity of 14.6 dBi, the radiated power and dc-to-THz efficiency of the radiating source are calculated as −22 dBm and 0.332%, respectively. By adjusting the supply voltage, the output frequency can be tuned from 524.7 to 555.8 GHz, indicating a 5.9% frequency tuning range.

show abstract

Section: Modeling Of Transistor Interconnect Parasiticsmentioning

confidence: 99%

mentioning

confidence: 99%

A 525–556-GHz Radiating Source With a Dielectric Lens Antenna in 28-nm CMOS

Guo

Standaert

Reynaert

2018

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…InP HEMT amplifiers [8] may be an avenue to further increase the LO power in future THz systems. In the above measurements, IR radiation is blocked and the fundamental leakage is verified to be insignificant (at least 10dB lower than the 3rd harmonic) using the techniques of [5]. The phase noise at 559.89GHz is characterized in Fig.…”

mentioning

confidence: 91%

“…It would be beneficial to further develop frequency synthesizers at the scientifically important 0.5-to-0.6THz in mainstream CMOS technologies with larger integration and lower power than that of SiGe HBT counterparts. Although VCOs/multipliers [3][4][5][6] have been developed at these frequencies, the realization of wide-bandwidth and low-phase-noise synthesizers remains challenging due to the following obstacles: (a) the use of varactors or other passives for frequency tuning radically lowers the tank quality and inhibits oscillation; (b) there is no proven injection-locked frequency divider (ILFD) that can operate beyond 0.2THz with a sufficiently wide frequency locking range. To date, no silicon based synthesizer has been reported beyond 0.32THz.…”

mentioning

confidence: 99%

See 1 more Smart Citation

2.1 An integrated 0.56THz frequency synthesizer with 21GHz locking range and −74dBc/Hz phase noise at 1MHz offset in 65nm CMOS

Zhao

Chen

Virbila

et al. 2016

2016 IEEE International Solid-State Circuits Conference (ISSCC)

Self Cite

View full text Add to dashboard Cite

Spectra from 0.5 to 0.6THz play critical roles in planetary science, astrophysics and radio-astronomy as various chemical species including water, nitrates (NO 2 , N 2 O, NH 3 ) and organics (CH 4 and HCN) can either absorb or reflect radiation in this frequency regime. Accordingly, NASA and ESA have developed a wide range of spectroscopic sounding instruments to investigate our solar system. Current LO chains for spectroscopic receivers are implemented with discrete III-V devices and heavy waveguide assemblies. For instance, the 600GHz NASA PIS-SARRO spectrometer for Europa begins with a 33GHz PLL, tripled to 100GHz, doubled to 200GHz, and then tripled again to 600GHz via multiple waveguides. This LO chain occupies over 3000cm 3 , weighs 2.5kg, and consumes 11.5W of DC power.Frequency synthesizers around 0.3THz demonstrated in SiGe HBTs confirmed the potential of implementing a terahertz LO in IC technologies [1,2]. It would be beneficial to further develop frequency synthesizers at the scientifically important 0.5-to-0.6THz in mainstream CMOS technologies with larger integration and lower power than that of SiGe HBT counterparts. Although VCOs/multipliers [3][4][5][6] have been developed at these frequencies, the realization of wide-bandwidth and low-phase-noise synthesizers remains challenging due to the following obstacles: (a) the use of varactors or other passives for frequency tuning radically lowers the tank quality and inhibits oscillation; (b) there is no proven injection-locked frequency divider (ILFD) that can operate beyond 0.2THz with a sufficiently wide frequency locking range. To date, no silicon based synthesizer has been reported beyond 0.32THz.We report realization of a 0.54-to-0.56THz synthesizer ( Fig. 2.1.1) in a standard 65nm CMOS technology. Its front-end is composed of a primary triple-push Colpitts oscillator (P-TPCO), an auxiliary TPCO (A-TPCO), a single-ended Colpitts oscillator (SECO), a 1 st ILFD, and a 2 nd wide band ILFD, followed by a divide-by-16 static-frequency-divider chain. The P-TPCO delivers its 3 rd harmonic for the intended LO at 0.56THz, while the A-TPCO and the subsequent Colpitts oscillator (CO) bridge it to the 1 st IFDL. It is nevertheless impossible to exploit ILFD directly at 0.56THz. We thus use 1 st ILFD to divide the P-TPCO 186.7GHz fundamental frequency to 93.3GHz, and use the 2 nd ILFD and the subsequent divider chain for further divisions in the PLL feedback loop. To eliminate noise from the charge pump and multi-modulus dividers (MMD), the PLL uses a sub-sampled phase detector (SSPD) [7], followed by a Gm cell, which converts the phase error to current that charges an off-chip loop filter and supplies TPCO control voltage, V CTL . An auxiliary frequency-locked loop with a conventional MMD, a phase-frequency detector (PFD) and a charge pump (CP) conducts an automatic frequency search before enabling the SSPD to lock to the precise phase. A 3-wire digital serial peripheral interface (SPI) is used to control the tuning-knob DACs throughout the synthesizer.Both...

show abstract

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Shan

Liang

Li³

et al. 2023

Circuit Theory & Apps

View full text Add to dashboard Cite

SummaryThe research and development on solid‐state source generators have been making progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF energy efficiency in the millimeter‐wave (mmW) and terahertz (THz) domains. In particular, their full integration in silicon technologies, such as advanced complementary‐metal‐oxide‐semiconductor processes, has motivated the design of low cost, high performance, and miniature integrated circuits (ICs). This manuscript focuses on providing a general overview of recent progress on solid‐state signal source operating beyond 60 GHz till the THz region, from the perspective of operating principle, design metrics, state‐of‐the‐art performance, testing results, and their applications in emerging mmW/THz systems. Finally, with the use of fully integrated source generators, several design arts are highlighted to showcase the recent advances of ICs toward millimeter‐wave and THz radiation, imaging, coupled oscillator network (CON), and communication. Potential future research directions enabled by mmW/THz signal sources will be envisioned.

show abstract

A 0.54-0.55 THz 2×4 coherent source array with EIRP of 24.4 dBm in 65nm CMOS technology

Cited by 27 publications

References 5 publications

A 525–556-GHz Radiating Source With a Dielectric Lens Antenna in 28-nm CMOS

A 525–556-GHz Radiating Source With a Dielectric Lens Antenna in 28-nm CMOS

2.1 An integrated 0.56THz frequency synthesizer with 21GHz locking range and −74dBc/Hz phase noise at 1MHz offset in 65nm CMOS

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Contact Info

Product

Resources

About