This paper presents a 0.49 terahertz (THz) radiating source in 40 nm CMOS. The radiating source is composed of a cross-coupled oscillator, a differential tripler, a substrate integrated waveguide (SIW) based harmonic power extractor (HPE) and a folded dipole antenna. The HPE can optimize third harmonic power extraction and provide suppression of unwanted lower order harmonic leakage. The measured equivalent isotropically radiated power (EIRP) of the radiating source is -4.1 dBm. According to simulated antenna gain of 11.2 dB, the output power and DC-to-THz efficiency of the signal source can be calculated as -15.3 dBm and 0.173%, respectively. The output frequency can be tuned from 475 to 511 GHz within 10 dB EIRP variation.
This paper presents the design, implementation, and measurement of a 0.53-THz radiating source in a 28-nm bulk CMOS technology. An oscillator-tripler topology is employed to effectively generate and extract the third harmonic at 0.53 THz within a fully symmetrical layout. A dielectric lens is designed, fabricated, and mounted on top of the chip to enhance the antenna gain. During the design of the radiating source, a lumped model representing the transistor interconnect parasitics including the parasitic capacitances, resistances, and inductances is developed using a simulation-based modeling method. The accuracy of the developed model is validated by comparing the simulation and measurement of the 0.53-THz radiating source. The measured equivalent isotropically radiated power of the radiating source is-7.4 dBm at 527.6 GHz under 0.9-V supply voltage. According to the measured antenna directivity of 14.6 dBi, the radiated power and dc-to-THz efficiency of the radiating source are calculated as −22 dBm and 0.332%, respectively. By adjusting the supply voltage, the output frequency can be tuned from 524.7 to 555.8 GHz, indicating a 5.9% frequency tuning range.
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