A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm

Golcuk, Fatih; Gurbuz, Ozan Dogan; Rebeiz, Gabriel M.

doi:10.1109/tmtt.2013.2287493

Cited by 79 publications

(23 citation statements)

References 28 publications

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“…Some groups have reported power combining from multiple oscillators leading to a high output power, but they tend to consume large dc power and need additional combining networks [18]- [20]. There have also been reports on multiplier-based signal sources working beyond 300 GHz [21]- [25], but most of them need an external low-frequency signal source for operation and suffer from increased chip size and dc power dissipation. This paper introduces two high-power fundamental-mode oscillators based on a 250-nm InP HBT technology operating around 300 GHz, which adopt the common-base configuration for the oscillator core instead of the common-emitter configuration typically used.…”

Section: Introductionmentioning

confidence: 99%

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz. Index Terms-Frequency control, heterojunction bipolar transistors (HBT), voltage-controlled oscillators (VCO). 0018-9480

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Section: Introductionmentioning

confidence: 99%

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…I N THE past few years, high-frequency integrated systems in the millimeter-wave (mm-Wave) and terahertz (THz) range have demonstrated a lot of promising new applications in high-speed wireless communication, imaging, sensing, health care, and global environment monitoring [1]- [16]. One of the critical challenges has been the electromagnetic (EM) interface.…”

Section: Introductionmentioning

confidence: 99%

“…However, an on-chip antenna embedded in a dielectric interface between air and silicon can excite multiple substrate modes, which can critically affect radiation patterns, efficiency, and the antenna impedance. The surface-wave effect, therefore, is traditionally mitigated using off-chip silicon lenses [5], [6], [13] or by using high-dielectric superstrates [16].…”

Section: Introductionmentioning

confidence: 99%

Designing Optimal Surface Currents for Efficient On-Chip mm-Wave Radiators With Active Circuitry

Sengupta

Hajimiri

2016

IEEE Trans. Microwave Theory Techn.

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Integrated antennas have become the attractive solution as the electromagnetic (EM) interface for mm-Wave and terahertz ICs. However, on-chip antennas lying at the interface between two different dielectrics (such as air and substrate) can channel most of its power into multiple nonradiative surfacewave modes, reducing efficiency drastically. In this paper, we consider the following problem: given a dielectric substrate, what is the theoretical optimal 2-D surface-current configuration that collectively suppresses surface waves and maximizes radiation efficiency with the desirable radiation pattern? This paper also discusses demonstrative examples of a circuit-EM codesign approach to realize the approximation of such current configurations. Measurement results of radiating arrays in CMOS at mm-Wave frequencies (250-300 GHz) are presented and compared with theoretical predictions.

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“…390-440 GHZ WAFER-SCALE POWER COMBINING MULTIPLIER ARRAY Fig. 6 presents a 2x4 amplifier/quadrupler array in 45nm CMOS technology [6]. The distribution is one at Wband (90-110 GHz) and the quadruplers are placed just before the antennas so as not to incur the high loss in the CMOS backend at 400 GHz.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Millimeter-Wave Phased-Array RFICs

Rebeiz

Shin

Golcuk

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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This invited talk will present a summary of the millimeter-wave wafer-scale phased array work at UCSD. This concept can drastically reduce the cost of millimeterwave phased arrays by combining the RFIC blocks, antennas, power distribution and summing, digital control and up and down converters all on the same wafer (or large piece of silicon), and eliminates all RF transitions in and out of the chip, therefore resulting in more efficient systems and lower cost systems. Examples at 90-100 GHz, 108-114 GHz and 400 GHz will be presented in this paper, together with their measured antenna patterns.

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A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm

Cited by 79 publications

References 28 publications

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Designing Optimal Surface Currents for Efficient On-Chip mm-Wave Radiators With Active Circuitry

Wafer-Scale Millimeter-Wave Phased-Array RFICs

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