A 0.37–0.43 THz wideband quadrupler with 160 μW peak output power in 45 nm CMOS

Abstract

This paper presents a wideband 45 nm CMOS SOI quadrupler at 370 to > 430 GHz. The balanced multiplier results in a very low third harmonic component, and uses reflectors at the output port to reflect the fundamental and the second harmonic frequency into the quadrupler for improved efficiency. The measured output power is > 100 μW at 370-430 GHz with a peak value of 150-160 μW at 390-415 GHz and a conversion loss of 19-20 dB. To the author's knowledge, this is the first demonstration of a wideband CMOS quadrupler at THz frequencies.

A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm

“…The idea is to distribute the RF signal at -band frequencies where the transmission line is relatively low loss (1-1.2 dB/mm) and amplifiers are available for signal amplification. The signal is converted to 370-440 GHz using a quadrupler just before the planar antenna for reduced transmission-line loss at 400 GHz [20]. Furthermore, the -band RF signal can be locked to a 100-MHz reference using dividers [21].…”