A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

Rücker, H.; Heinemann, B.; Winkler, Wolfgang; Barth, R.; Borngräber, J.; Drews, Jürgen; Fischer, G.; Fox, A.; Grabolla, T.; Haak, U.; Knoll, D.; Korndörfer, F.; Mai, Christian; Marschmeyer, S.; Schley, P.; Schmidt, D.; Schmidt, J.; Schubert, Markus Andreas; Schulz, Katrin; Tillack, Bernd; Wolansky, D.; Yamamoto, Yuji

doi:10.1109/jssc.2010.2051475

Cited by 142 publications

(39 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The VCO is fabricated in IHP's SiGe BiCMOS technology SG13S [3]. This process offers heterojunction bipolar transistors (HBT) with a minimum effective emitter width of 130 nm, 250 GHz transit frequency (f T ) and 300 GHz maximum oscillation frequency (f max ).…”

Section: Circuit Designmentioning

confidence: 99%

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

Ahmed

Furqan

Heinemann

et al. 2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

Self Cite

View full text Add to dashboard Cite

The design and measurement results of a fully-differential fundamental-wave VCO based on the Colpitts topology are presented. The circuit is realized in a 0.13-µ µ µm SiGe BiCMOS technology with a maximum oscillation frequency of 300 GHz. Design measures taken to minimize phase noise and to achieve high output power without using any output buffer are discussed. Operating at a supply voltage of 3.3 V, on-wafer measurements show a tuning range of around 12 GHz from 147 to 159 GHz. The circuit achieves a maximum output power of 9 dBm (at 3.3 V) and 9.8 dBm (at 3.6 V), both with an efficiency of around 6 % and consumes a DC power of 132 mW and 164 mW, respectively. The average measured phase noise of the VCO over the entire tuning range is −92 dBc/Hz at 1 MHz offset, with a minimum phase noise of −96 dBc/Hz around 157 GHz. The VCO demonstrates state-of-the-art performance in D-Band both in terms of output power and phase noise.

show abstract

Section: Circuit Designmentioning

confidence: 99%

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

Ahmed

Furqan

Heinemann

et al. 2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

Self Cite

View full text Add to dashboard Cite

show abstract

“…1. A recent version of this HBT module is implemented in our 0.13µm BiCMOS technology corresponding to the initial DOTFIVE generation D51 (10). The HBT development of this work is performed in our 0.25µm SG25H1 BiCMOS technology (11) environment, including shallow trench isolation, a deeptrench-free implanted collector well, a poly-resistor, 5 metal layers, and a 1fF/µm 2 MIM capacitor.…”

Section: Device Fabricationmentioning

confidence: 99%

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

Heinemann

Barth

Bolze

et al. 2010

2010 International Electron Devices Meeting

Self Cite

133

View full text Add to dashboard Cite

show abstract

“…With the rapid advancement of HBT technology and high f t and f max , it has become possible to build fundamental millimeter wave sources in Silicon Germanium (SiGe) technology [1]. Recently, fundamental mode voltage controlled oscillators (VCOs) operating up to 181 GHz [2], 186 GHz [3], and 245 GHz [4] have been reported in SiGe BiCMOS technology. Moreover, VCO circuits can be used as benchmark to test and compare technologies in terms of speed and noise performance.…”

Section: Introductionmentioning

confidence: 99%

Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology

Ali

Fischer

Thiede

2015

2015 German Microwave Conference

View full text Add to dashboard Cite

Two low power fundamental mode voltage controlled oscillators (VCO-I and VCO-II) in the D-band frequency range are presented in this paper. The oscillator core is Colpitts type with an additional common base transistor in cascode configuration to avoid a separate output buffer. The chips are fabricated in a 0.13 µm SiGe BiCMOS HBT technology which offers f t and f max of 300 GHz and 500 GHz, respectively. VCO-I has a tuning range from 138.6 to 147.7 GHz while that for VCO-II is from 142.3 to 150.9 GHz. Both oscillators deliver output power from -1 to -6 dBm to 50 Ω load and consume 47 mW from a -2.8 V supply. A phase noise of -77 dBc/Hz at 5 MHz offset frequency was measured.

show abstract

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

Cited by 142 publications

References 18 publications

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology

Contact Info

Product

Resources

About

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

Cited by 142 publications

References 18 publications

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc&#x002F;Hz FoMT

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc&#x002F;Hz FoMT

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

Low power fundamental VCO design in D-band using 0.13 &#x00B5;m SiGe BiCMOS technology

Contact Info

Product

Resources

About

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT

Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology