SiGe HBT technology with f&lt;inf&gt;T&lt;/inf&gt;/f&lt;inf&gt;max&lt;/inf&gt; of 300GHz/500GHz and 2.0 ps CML gate delay

Heinemann, B.; Barth, R.; Bolze, D.; Drews, Jürgen; Fischer, G.; Fox, A.; Fursenko, O.; Grabolla, T.; Haak, U.; Knoll, D.; Kurps, R.; Lisker, Marco; Marschmeyer, S.; Rücker, H.; Schmidt, D.; Schmidt, J.; Schubert, Markus Andreas; Tillack, Bernd; Wipf, Christian; Wolansky, D.; Yamamoto, Yuji

doi:10.1109/iedm.2010.5703452

Cited by 134 publications

(86 citation statements)

References 8 publications

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“…The first SiGe HBT technology with 500 GHz operating frequency and a gate delay of 1.9 ps at room temperature [1] was developed within the DOTFIVE project [2]. The follow up project DOTSEVEN is targeting the development of SiGe:C HBT technologies with cut off frequencies f max of around 700 GHz.…”

mentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring f T and f max of ~300 GHz and ~400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and compact model simulation is shown. A simple method is presented that calculates the nonlinear circuit temperature rise in the local circuit area resulting from mutual heating of all active and passive components. Once taken into account the circuit temperature, the accuracy of circuit simulation is significantly improved.

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mentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…The circuit was fabricated in IHP 130-nm SiGe HBT technology [1]. A chip photo of the fabricated detector is shown in Fig.…”

Section: Measurement Resultsmentioning

confidence: 99%

“…The continuous scaling and material innovations in the semiconductor technologies in recent decades have led to transistors with f max up to 500 GHz [1] and beyond 1 THz [2,3] based on Si and III-V semiconductors, respectively. This improved speed has triggered device application at increasingly high frequency bands, penetrating into the THz band (300 GHz to 3 THz).…”

Section: Introductionmentioning

confidence: 99%

A Wideband H-Band Image Detector Based on SiGe HBT Technology

Yoon¹,

Kaynak²,

Tillack³

et al. 2015

Journal of electromagnetic engineering and science

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A wideband H-band detector operating near 300 GHz has been developed based on SiGe HBT technology. The detector consists of an on-chip antenna and a HBT differential pair for square-law detection. It showed responsivity of more than 1,700 V/W and noise equivalent power (NEP) smaller than 180 pW/Hz 0.5 for the measured frequency range of 250-350 GHz. The maximum responsivity and the minimum NEP were 5,155 V/W and 57 pW/Hz 0.5 , respectively; both were obtained at 330 GHz with DC power dissipation at 9.1 W.Key Words: Detector, Imaging, SiGe HBT, Terahertz, Wideband. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…For a heterodyne system, two circuit components are indispensable: oscillator and mixer. In this paper, we report an oscillator and a mixer that can be readily adopted for heterodyne systems operating near 140 GHz, both designed and fabricated based on IHP 0.13-mm SiGe HBT technology [6].…”

Section: Introductionmentioning

confidence: 99%

An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology

Yoon¹,

Song²,

Kaynak³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.

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SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

Cited by 134 publications

References 8 publications

Characterization of mutual heating inside a SiGe ring oscillator

Characterization of mutual heating inside a SiGe ring oscillator

A Wideband H-Band Image Detector Based on SiGe HBT Technology

An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology

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