A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-<i>μ</i>m CMOS

Kim, Myungjun; Cho, Seonghwan

doi:10.1109/lssc.2020.3025226

Cited by 13 publications

(12 citation statements)

References 2 publications

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“…Furthermore, the positive and negative PSRR results with respect to V DD and V SS are plotted in Figure 5d, where the maximum PSRRs of −112 and −128 dB were obtained for V REFP and V REFN , respectively. The PSRR difference between V REFP and V REFN arises from the different factors in the denominator; r o,P4 in Equation ( 12) increases by a factor of g m,N4 (g m , p5 + g m,p6 ), while r o,N10 in Equation ( 15 Finally, the overall performance of the proposed reference is tabulated in Table 2 and compared with the previous voltage reference circuits presented in [12,13,16]. The line regulation obtained was higher than those in [13,16], but lower than that in [12].…”

Section: Resultsmentioning

confidence: 99%

“…The PSRR difference between V REFP and V REFN arises from the different factors in the denominator; r o,P4 in Equation ( 12) increases by a factor of g m,N4 (g m , p5 + g m,p6 ), while r o,N10 in Equation ( 15 Finally, the overall performance of the proposed reference is tabulated in Table 2 and compared with the previous voltage reference circuits presented in [12,13,16]. The line regulation obtained was higher than those in [13,16], but lower than that in [12]. However, the proposed reference circuit exhibits excellent PSRR compared with [12,13,16].…”

Section: Resultsmentioning

confidence: 99%

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High PSRR Wide Supply Range Dual-Voltage Reference Circuit for Bio-Implantable Applications

Zawawi¹,

Choi

Kim

2021

Electronics

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On-chip systems are challenging owing to the limited size of the components, such as the capacitor bank in the rectifier. With a small on-chip capacitor, the output voltage of the rectifier might ring if the circuit experiences significant changes in current. The reference circuit is the first block after the rectifier, and the entire system relies on its robustness. A fully integrated dual-voltage reference circuit for bio-implantable applications is presented. The proposed circuit utilizes nonlinear current compensation techniques that significantly decrease supply variations and reject high-supply ripples for various frequencies. The reference circuit was verified using a 0.35 µm complementary metal-oxide semiconductor (CMOS) process. Maximum PSRR values of −112 dB and −128 dB were obtained. With a supply range from 2.8 to 12 V, the proposed design achieves 0.916 and 1.5 mV/V line regulation for the positive and negative reference circuits, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High PSRR Wide Supply Range Dual-Voltage Reference Circuit for Bio-Implantable Applications

Zawawi¹,

Choi

Kim

2021

Electronics

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“…In Figure 8 , the delay lines can be implemented in various ways. One of them is to use a proportional to the absolute temperature (PTAT) and a complementary to the absolute temperature (CTAT) signals [ 88 , 89 , 90 , 91 , 92 , 93 , 94 ]. If the PTAT and CTAT voltages are generated by the NMOS transistors operating in the subthreshold region as shown in Figure 9 , the PTAT and CTAT voltages can be represented as follows.…”

Section: Characterizationmentioning

confidence: 99%

Categorization and Characterization of Time Domain CMOS Temperature Sensors

Byun

2020

Sensors

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Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

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“…Many works [1][2][3] can achieve a high-precision reference voltage. Due to the limitation of the common-collector structure of the bipolar junction transistor, the reference voltage is higher than 1.2 V, and the minimum supply voltage must be higher than 1.4 V as well.…”

Section: Introductionmentioning

confidence: 99%

“…Bandgap reference with current mode structure. P represents PMOSFET; R represents resistance; Q represents transistor.The base-emitter junction of the PNP tube has a VBE-IC relationship given by V BE = kT q ln I C I S(1)…”

mentioning

confidence: 99%

A Curvature Compensation Technique for Low-Voltage Bandgap Reference

Shen

Chen

et al. 2021

Energies

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Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of VBE. The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10−6/°C to 5.71 × 10−6/°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10−6/°C to 5.22 × 10−6/°C.

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A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS

Cited by 13 publications

References 2 publications

High PSRR Wide Supply Range Dual-Voltage Reference Circuit for Bio-Implantable Applications

High PSRR Wide Supply Range Dual-Voltage Reference Circuit for Bio-Implantable Applications

Categorization and Characterization of Time Domain CMOS Temperature Sensors

A Curvature Compensation Technique for Low-Voltage Bandgap Reference

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