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Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

“…This is in agreement with our recent observation that the anneal-related loss of the RuO 2 impurity phase leaves a stoichiometric SrRuO 3 layer of higher resistivity [15]. This observation is also consistent with the results of Lee and Tsai [14], who found that the sheet resistivity of SRO thin films decreases with the increase of the ruthenium content by changing the chemical ratio of Ru/(Sr + Ru) and, finally, the Curie transition kink even vanishes.…”

“…Polycrystalline films of mixed phases SrRuO 3 , Sr 2 RuO 4 , and RuO 2 , deposited on silicon and aluminum oxide substrates using a tubular hot-wall reactor, exhibited an electrical resistivity significantly higher than those prepared by PLD, owing to off-stoichiometry [13]. Lee and Tsai [14] studied that SrRuO 3 thin films using metal organic chemical vapor deposition (MOCVD), by adjusting the molar ratio of RuO 2 and SrO layers thin films of SrRuO 3 with excess of ruthenium oxide could be prepared and the sheet resistivity of the film decreases with the ruthenium content.…”

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

“…The roughness values (R a ) were 1.79 nm, 0.52 nm, 0.65 nm, and 1. 30 26 The resistance of the CaRuO 3 -buffer layer is much larger than the resistance of the other buffer layers, which could affect the I-V behaviors of the BFO films. Such effects need further investigations.…”

Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD

“…This observation agrees with TGA measurements of SRO containing RuO 2 phase by Dabrowski et al 12, which showed weight losses and a change of the ratio of the phase fraction of SRO and RuO 2 due to the volatilization of RuO 2 at temperatures above 700 °C. Also Lee and Tsai 32 used the volatility of RuO 2 at 700 °C to synthesize a SRO film from a RuO 2 and SrO double layer at this temperature. The simultaneous roughening of the film surface (annealed at 600 °C, Figs.…”