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Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

“…In the ideal case, these measurements are frequency independent, but this is often impossible because of the presence of interface states at the metal-semiconductor interface. 14,15 Schottky barrier heights for bulk ZnO have been reported in the range of 0.6-0.8 eV. 2,4 In low-dimensional systems, the Schottky barrier height depends not only on the work function of the metal but also on the pinning of the Fermi level by the surface states, image force lowering of the barrier, field penetration and the existence of an interfacial insulating layer; these effects change the absolute current value at low bias values by lowering the Schottky barrier.…”

Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

“…6b) for hydrogen-treated diode from the slope of this straight line were obtained for both devices. Bowing of the experimental ln(I 0 /T 2 ) versus 1/T curve may be caused by the temperature dependence of the BH and ideality factor due to the existence of the surface inhomogeneities of the GaAs substrate [15][16][17]30,[39][40][41][42][43][47][48][49]58,59]. As it will be discussed below, the deviation in the Richardson plots may be due to the spatially inhomogeneous BHs and potential fluctuations at the interface that consist of low and high barrier areas [17,24,35 That is, the current through the diode will flow preferentially through the lower barriers in the potential distribution.…”

“…[17,39,40,[47][48][49][51][52][53][54][55]58,59], since current transport across the MS interface is a temperature activated process, at low temperatures, current transport will be dominated by current flowing through the patches of lower SBH and larger ideality factor. As the temperature increases, the apparent BH will increase with the temperature and bias voltage [17,39,40,[47][48][49][51][52][53][54][55]58,59]. The decrease in the barrier height with a decrease in temperature can be explained by the lateral distribution of BH if the barrier height has a Gaussian distribution of the barrier height values over the Schottky contact area with the mean barrier heightF b and standard deviation s s , and by thermionic field emission (TFE) [7][8][9][10][11][12][13].…”

“…For example, the ideality factor and the barrier height determined from the forward-bias current-voltage (I-V) characteristics are found to be a strong function of temperature [7][8][9][10][11]15,[25][26][27][28][29][30]. In a number of experimental studies it has been stated that [39][40][41][42][43][44][45][46][47][48][49] height decreases with decreasing temperature. This effect, known as temperature effect T 0 , was first reported by Padovani and Sumner [25] and has been widely studied.…”

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

“…The Schottky contacts have an important role in modern electronics (1)(2)(3)(4)(5). In addition, the interface states and interfacial oxide layer between the inorganic semiconductor and deposited material used for the rectifying contact formation play an important role in the determination of the Schottky barrier height (SBH) and other characteristics parameters of the devices (6)(7)(8)(9)(10)(11)(12)(13)(14).…”