99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Morita, Tatsuo; Tamura, Shinichi; Anda, Yoshiharu; Ishida, M.; Uemoto, Yasuhiro; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/apec.2011.5744640

Cited by 134 publications

(61 citation statements)

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“…In [9], GaN devices 154 are operated at 1-MHz switching frequency in LLC resonant 155 converter and achieved 96.4% efficiency at 1-kW output power. 156 In [10], GaN devices are used at low-frequency three-phase 157 inverter and the inverter achieved 99.3% efficiency at 900-W 158 output power and 16-kHz switching frequency. Normally-on 159 GaN HEMTs at 600-V voltage class with and without cascode 160 structure are discussed in [12] and [13] for hard-switching 161 topologies.…”

Section: E E E P R O O Fmentioning

confidence: 99%

Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Gurpinar

Castellazzi

2015

IEEE Trans. Power Electron.

183

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Section: E E E P R O O Fmentioning

confidence: 99%

Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Gurpinar

Castellazzi

2015

IEEE Trans. Power Electron.

183

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“…Finally, the low Ron × Qg product (on-resistance × gate charge) smaller than 1 nC·Ω permits to significantly reduce the switching losses of power converters. As a consequence, kW-range power converters with efficiency higher than 99% have already been demonstrated, based on GaN HEMTs [4].…”

Section: Introductionmentioning

confidence: 99%

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

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“…Devices with very competitive specific R on compared to the existing silicon metal-oxide-semiconductor field effect transistor (MOSFET) technologies have been reported both in academia and industry [1,2]. Additionally, the use of GaN devices can lead to lower switching losses, thus allowing an increase in switching frequency and therefore an overall increase in power density and efficiency of power conversion equipment [3][4][5]. Therefore, with GaN device technology being ramped up for volume production an increasing amount of research is now focused on the performance of GaN devices in various power electronic converters such as, boost, buck-boost, half-bridge and indirect matrix inverter topologies [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

et al. 2017

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Abstract:With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed.

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Cited by 134 publications

References 1 publication

Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

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