8 Gb/s CMOS compatible monolithically integrated silicon optical receiver

A 2.5-Gb/s Receiver PDIC With Low-Noise Integrated Charge Pump

“…Since our laser sources only achieve a finite extinction ratio (EX) of 7, these values were corrected by subtracting 1.25 dB to get the sensitivities for a light source with infinite EX. For example, with 660 nm, BER , and Table I, and for a BER of , an average power of 23.5 dBm at 660 nm and 21.2 dBm at 850 nm were necessary (compare with 21 dBm at 2 Gb/s with a second supply voltage of 27 V [7]). No difference in the sensitivity was found between the case that the PD voltage was generated on chip by the low-noise CP and the case that the PD voltage was supplied from an off-chip battery.…”

“…This boosts the drift velocity as long as the saturation velocity is not reached and the SCR is not further widened. The lateral p-i-n PDs on silicon-on-insulator (SOI) [4]- [7] also required a higher voltage from outside of the chip. The PDICs of [4] and [5] used an nMOS technology also supplying depletion transistors.…”

“…In [6], the quantum efficiency of the lateral PD was only 10% at 850 nm, but the sensitivity was improved since the receiver was implemented in a deep submicrometer technology, which offers lower noise due to the high transconductance of the FETs. The receiver described in [7] achieved a sensitivity of 21 dBm at 2 Gb/s with a high voltage of 27 V at the PD. All sensitivities of the receivers in [4]- [7] were measured with a pseudorandom bit sequence (PRBS) of the length .…”

“…The receiver described in [7] achieved a sensitivity of 21 dBm at 2 Gb/s with a high voltage of 27 V at the PD. All sensitivities of the receivers in [4]- [7] were measured with a pseudorandom bit sequence (PRBS) of the length . We use a PRBS of the length instead to obtain the worst case sensitivity.…”

Monolithic optical receiver in 0.5 μm BiCMOS technology for wavelengths up to 850 nm

“…These slow tails of the photocurrent can be suppressed if base-collector diodes in standard-buried collector bipolar technology are used as a detector, but due to the thin epitaxial layer, capacitance is high and quantum efficiency is low, leading together to a poor sensitivity [2]. In [3,4] lateral photodiodes were implemented in a SOI technology in a thin silicon layer, whereby the slow diffusion currents generated deep in the substrate are blocked due to the insulating buried oxide layer. For these thin photodiodes the quantum efficiency is low (10%) leading to a low sensitivity.…”