The revolution in SiGe: impact on device electronics

Harame, D.L.; Koester, Steven J.; Freeman, G.; Cottrel, P; Rim, K.; Dehlinger, G.; Ahlgren, D.; Dunn, James; Greenberg, D.; Joseph, A.J.; Anderson, F.; Rieh, Jae-Sung; Onge, St.; Coolbaugh, Douglas; Vidhya, R.; Cressler, John D.; Subbanna, S.

doi:10.1016/j.apsusc.2003.08.086

Cited by 50 publications

(45 citation statements)

References 31 publications

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“…In particular, Si-and Ge-based FSs, which are expected to be compatible with advanced Si technology, have a potential impact on a new development of integrated electronics employing spin degrees of freedom, since they can play significant roles in recently proposed 'spin transistors' that are functional building blocks for such integrated circuits [7][8][9]. It should be emphasized that Ge and also SiGe are now well recognized to be key materials for advanced Si transistors with high performance [10][11][12].…”

mentioning

confidence: 99%

Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films

Sugahara

Lee

Yada

et al. 2005

Jpn. J. Appl. Phys.

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We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films.Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn 5 Ge 3 . Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge 1-x Mn x clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge 1-x Mn x was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge 1-x Mn x clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.

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mentioning

confidence: 99%

Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films

Sugahara

Lee

Yada

et al. 2005

Jpn. J. Appl. Phys.

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“…[1,2]). Silicon and germanium are miscible in all proportions and a number of structural varieties of their alloys have been prepared by several techniques.…”

Section: Introductionmentioning

confidence: 97%

IR laser CVD of nanostructured Si/Ge alloy from silane–germane mixture

Křenek

Murafa

Bezdička

et al. 2010

Journal of Analytical and Applied Pyrolysis

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“…In recent years, Si 1−x Ge x has been successfully incorporated into both bipolar and CMOS transistor-based manufacturing technologies [5]. However, Si 1−x Ge x has a number of benefits for photonic applications as well, not the least of which is an increased absorption coefficient and absorption edge at longer wavelengths compared to Si [6].…”

Section: Introductionmentioning

confidence: 99%

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

Koester

Schaub²,

Dehlinger

et al. 2006

IEEE J. Select. Topics Quantum Electron.

145

115

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Abstract-An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented. The optical properties of Ge and SiGe alloys are described and a review of previous research on SOI and SiGe detectors is provided as a motivation for the Ge-on-SOI detector approach. The photodetector design is described, which consists of lateral alternating p-and n-type surface contacts on an epitaxial Ge absorbing layer grown on an ultrathin-SOI substrate. When operated at a bias voltage of −0.5 V, 10 µm ×10 µm devices have dark current I dark , of only ∼10 nA, a value that is nearly independent of finger spacing S, between S = 0.3 µm and 1.3 µm. Detectors with S = 1.3 µm have external quantum efficiencies η, of 52% (38%) at λ = 895 nm (850 nm) with corresponding responsivities of 0.38 A/W (0.26 A/W). The wavelength-dependence of η agrees fairly well with expectations, except at longer wavelengths, where Si up-diffusion into the Ge absorbing layer reduces the efficiency. Detectors with 10 µm ×10 µm area and S = 0.6 µm have −3-dB bandwidths as high as 29 GHz, and can simultaneously achieve a bandwidth of 27 GHz with I dark = 24 nA, at a bias of only −1 V, while maintaining high efficiency of η = 46%(33%), at λ = 895 nm (850 nm). Analysis of the finger spacing and areadependence of the device speed indicates that the performance at large finger spacing is transit-time-limited, while at small finger spacing, RC delays limit the bandwidth. Methods to improve the device performance are presented, and it is shown that significant improvement in the speed and efficiency both at λ = 850 and 1300 nm can be expected by optimizing the layer structure design.

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The revolution in SiGe: impact on device electronics

Cited by 50 publications

References 31 publications

Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films

Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films

IR laser CVD of nanostructured Si/Ge alloy from silane–germane mixture

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

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