79GHz CMOS power amplifier using temperature compensation bias

Motoyoshi, Mizuki; Takano, Kyoya; Yoshida, Takeshi; Katayama, Kosuke; Amakawa, Shuhei; Fujishima, Minoru

doi:10.1109/eumic.2014.6997788

Cited by 6 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 compares the amplifier’s performance with on-chip temperature compensation circuits. Compared with the compensation circuit structures and methods in the literature [ 23 , 24 , 38 , 39 , 40 ], the temperature compensation circuit proposed in this paper has a simple structure, a smaller overall chip area, and a better compensation effect for small-signal gain and output power. Still, the compensation effect for PAE was poor.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

2022

View full text Add to dashboard Cite

Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.

show abstract

Section: Resultsmentioning

confidence: 99%

“…In addition, these post-layout simulation results can be regarded as a supplement to the measured results in Refs. [ 23 , 38 , 39 , 40 ]. This idea is consistent with Ref.…”

Section: Resultsmentioning

confidence: 99%

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

2022

View full text Add to dashboard Cite

show abstract

“…Main technical obstacles for using CMOS technology in millimeter-wave automotive radar are the achievable output power, receiver noise, and linearity over the whole temperature range up to 125 • C. Furthermore reliability, lifetime, and robustness still need to be proven in an automotive environment [10] and [11]. Modern automotive radar sensors like the Bosch MRR [12] are manufactured using surface-mount technology, even for the 77 GHz millimeter-wave parts.…”

Section: A Semiconductor Technologymentioning

confidence: 99%

Driving towards 2020: Automotive radar technology trends

Hasch

2015

2015 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (ICMIM)

View full text Add to dashboard Cite

In the last few years automotive radar has been transformed from being a niche sensor to becoming standard even in middle-class cars. With Euro-NCAP ratings now requiring automated braking and pedestrian safety functionality, radar is often identified as the best suited sensor for this purpose. Additionally, future automated driving will require detailed and highly reliable information on the environment and surrounding street traffic. This requires radar sensors to provide more detailed information about the environment, foremost in the spatial domain. Automotive radar has always benefited significantly from technological advances, especially in semiconductor technology and packaging, allowing a better performance and much more functionality in the radar frontend. A second key area is the antenna system, where new concepts to acquire more information about signals reflected from the environment can significantly improve resolution and detection performance.

show abstract

“…It is mainly due to the above reasons; the PA's performance degradation for the changes in temperature and humidity conditions is a hot topic of research [40]- [48]. However, most of the published papers are focused on the PA's performances degradations limited to the individual characteristic temperature and humidity, for instance, 85℃/85%RH [40], 121℃/100%RH [40], 0℃ [41], 25℃ [42], 50℃ [49], 80℃ [50], 100℃ [43], 130℃/60%RH [44], 130℃/40%RH [44]. Measurement of a PA's temperature and humidity dependence at specific temperature/humidity points does not provide enough information to model the relationships of the PA's performance degradations in actual environmental conditions [34].…”

Section: Introductionmentioning

confidence: 99%

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

View full text Add to dashboard Cite

As the technology scales down, besides the CAD tools and design guidelines, understanding circuit performance degradation as a consequence of transistor degradation becomes essential for designers. Due to several adverse environmental conditions, the study of performance degradation in the power amplifier (PA) is very demanding research. In this paper, an RF PA is experimentally studied to observe various characteristic degradations in a broad range of operating temperature and humidity conditions. Based on a few key measurement points, a measurement-based modeling method is proposed to help designers make intelligent decisions to minimize the performance degradation effects. This method uses four two-dimensional interpolation models, and the results show that the prediction results of the four planar interpolation models are in good agreement with the measurement results. The results presented in this article help select design models for the RF power amplifier that can analyze the performance degradation of the transistor parameters in advance. Cubic and spline interpolation has the highest model accuracy among the four two-dimensional models, while the nearest interpolation offers the shortest training time.

show abstract

79GHz CMOS power amplifier using temperature compensation bias

Cited by 6 publications

References 10 publications

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

Driving towards 2020: Automotive radar technology trends

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Contact Info

Product

Resources

About